BF998E6327 Infineon Technologies, BF998E6327 Datasheet

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Silicon N_Channel MOSFET Tetrode Short-channel transistor with high quality factor For low-noise, gain-controlled input stage GHz Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package ...

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Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ G1S Gate 1 source breakdown voltage mA G2S G2S DS Gate2 source breakdown voltage ...

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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Forward transconductance mA G2S Gate1 input capacitance mA G2S ...

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Total power dissipation P BF998, BF998R 220 mW 180 160 140 120 100 Gate 1 forward transconductance 5V Parameter ...

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Drain current G1S Parameter G2S -0.75 -0.5 -0.25 0 Noise figure G2S MHz 10 dB ...

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Power gain G2S f = 800 MHz - Output capacitance C dss 2.5 2 1 Gate ...

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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...

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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143R 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 1.7 0.2 ...

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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...