BF998E6327 Infineon Technologies, BF998E6327 Datasheet - Page 2

• Manufacturer Part Number: BF998E6327
• Description: MOSFET N-CH 12V 200MA SOT-143
• Manufacturer: Infineon Technologies

Specifications of BF998E6327

• Transistor Type: N-Channel
• Frequency: 45MHz
• Gain: 28dB
• Voltage - Rated: 12V
• Current Rating: 30mA
• Noise Figure: 2.8dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Other names: BF998; BF998E6327XT; BF998INTR; BF998XTINTR; BF998XTINTR; SP000010978

Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate 1 source breakdown voltage
Gate2 source breakdown voltage
Gate 1 source leakage current
Gate 2 source leakage current
Drain current
V
Gate 1 source pinch-off voltage
V
Gate 2 source pinch-off voltage
V
D
I
I
V
V
DS
DS
DS
G2S
G2S
= 10 µA, V
G1S
G2S
= 8 V, V
= 8 V, V
= 8 V, V
= 10 mA, V
= 10 mA, V
= 5 V, V
= 5 V, V
G1S
G2S
G1S
G1S
G2S
G2S
= 0 , V
= 4 V, I
= 0 , I
G2S
G2S
= -4 V, V
= V
= V
= V
= V
D
DS
DS
G2S
D
= 20 µA
DS
DS
= 0
= 0
G2S
= 20 µA
= 4 V
= 0
= 0
= -4 V
A
= 25°C, unless otherwise specified
2
Symbol
V
I
-V
-V
DSS
V
V
I
I
(BR)DS
G1SS
G2SS
G1S(p)
G2S(p)
(BR)G1SS
(BR)G2SS
min.
12
8
8
5
-
-
-
-
Values
typ.
0.8
0.8
9
-
-
-
-
-
max.
2.5
12
12
50
50
15
2
2007-04-20
-
BF998...
Unit
V
nA
nA
mA
V