PD57006STR-E STMicroelectronics, PD57006STR-E Datasheet - Page 5

• Manufacturer Part Number: PD57006STR-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD57006STR-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 70mA
• Voltage - Test: 28V
• Power - Output: 6W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 1A
• Drain Source Voltage (max): 65V
• Output Power (max): 6W(Min)
• Power Gain (typ)@vds: 15dB
• Frequency (max): 945MHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 0.58S
• Input Capacitance (typ)@vds: 27@28VpF
• Output Capacitance (typ)@vds: 14@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 20000mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10098-2; PD57006STR-E

PD57006-E
3
Impedance
Figure 2.
Table 7.
Freq. (MHz)
925
945
960
Current conventions
Impedance data
6.040 - j 0.936
5.886 - j 2.326
6.056 - j 3.522
PD57006-E
Z
IN
(Ω)
Doc ID 12611 Rev 3
6.273 + j 8.729
6.578 + j 5.999
7.215 + j 7.539
Z
DL
(Ω)
Freq. (MHz)
925
945
960
3.794 - j 1.632
4.039 - j 2.300
4.250 - j 3.791
PD57006S-E
Z
IN
(Ω)
3.513 + j 10.81
3.862 + j 10.58
4.005 + j 11.34
Impedance
Z
DL
(Ω)
5/22