PD57006STR-E STMicroelectronics, PD57006STR-E Datasheet - Page 8

• Manufacturer Part Number: PD57006STR-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD57006STR-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 70mA
• Voltage - Test: 28V
• Power - Output: 6W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 1A
• Drain Source Voltage (max): 65V
• Output Power (max): 6W(Min)
• Power Gain (typ)@vds: 15dB
• Frequency (max): 945MHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 0.58S
• Input Capacitance (typ)@vds: 27@28VpF
• Output Capacitance (typ)@vds: 14@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 20000mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10098-2; PD57006STR-E

Typical performance
8/22
Figure 10. Output power vs drain voltage
Figure 12. Output power vs supply voltage
8
7
6
5
4
3
2
10
1
8
6
4
2
0
10
0
12
14
925 MHz
100
16
VDD, SUPPLY VOLTAGE (V)
IDQ, BIAS CURRENT (mA)
18
945 MHz
20
200
925 MHz
22
945 MHz
24
Idq=70 mA
Pin= 23.6 dBm
300
960 MHz
960 MHz
Vdd=28V
Pin= 23.6 dBm
26
Doc ID 12611 Rev 3
28
400
30
Figure 11. Drain efficiency vs bias current
Figure 13. Drain efficiency vs supply voltage
60
50
40
30
20
10
60
50
40
30
20
10
10
0
12
925 MHz
960 MHz
925 MHz
14
945 MHz
100
VDD, SUPPLY VOLTAGE (V)
16
IDQ, BIAS CURRENT (mA)
945 MHz
18
200
20
960 MHz
22
24
300
Idq= 70 mA
Pin= 23.6 dBm
Vdd=28V
Pin= 23.6 dBm
26
PD57006-E
28
400
30