PD57006STR-E STMicroelectronics, PD57006STR-E Datasheet - Page 6

• Manufacturer Part Number: PD57006STR-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD57006STR-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 70mA
• Voltage - Test: 28V
• Power - Output: 6W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 1A
• Drain Source Voltage (max): 65V
• Output Power (max): 6W(Min)
• Power Gain (typ)@vds: 15dB
• Frequency (max): 945MHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 0.58S
• Input Capacitance (typ)@vds: 27@28VpF
• Output Capacitance (typ)@vds: 14@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 20000mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10098-2; PD57006STR-E

Typical performance
4
6/22
Figure 3.
Figure 5.
1.06
1.04
1.02
0.98
0.96
0.94
0.92
100
0.1
10
1
1
-25
0
f=1M H z
4
Typical performance
Capacitance vs supply voltage
Gate-source voltage vs
case temperature
0
Vds=10 V
8
Tc, CASE TEMPERATURE (°C)
VDD, DRAIN VOLTAGE (V)
25
12
16
50
20
Id=.05 A
C oss
C iss
75
C rss
24
Id=1.5 A
Doc ID 12611 Rev 3
Id=.2 A
Id=.6 A
Id=1 A
28
100
Figure 4.
Drain current vs
gate source voltage
PD57006-E