ATF-35143-BLKG Avago Technologies US Inc., ATF-35143-BLKG Datasheet - Page 2

• Manufacturer Part Number: ATF-35143-BLKG
• Description: IC PHEMT 1.9GHZ 15MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-35143-BLKG

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 18dB
• Voltage - Rated: 5.5V
• Current Rating: 80mA
• Noise Figure: 0.4dB
• Current - Test: 15mA
• Voltage - Test: 2V
• Power - Output: 10dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 300 mW
• Drain Source Voltage Vds: 5.5 V
• Gate-source Breakdown Voltage: - 5 V
• Continuous Drain Current: 80 mA
• Maximum Operating Temperature: + 160 C
• Maximum Drain Gate Voltage: - 5 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation Pd: 300mW
• Noise Figure Typ: 0.4dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Drain Current Idss Max: 15mA
• Drain-source Breakdown Voltage: 5.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1864; ATF-35143-BLKG

ATF-35143 Absolute Maximum Ratings
Notes:
6. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the
7. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
8. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
Product Consistency Distribution Charts
2
Figure 1. Typical Pulsed I-V Curves
(V
200
160
120
120
100
Figure 3. NF @ 2 GHz, 2 V, 15 mA.
LSL=0.2, Nominal=0.37, USL=0.7
80
40
80
60
40
20
GS
maximum Pdiss and Pin max ratings are not exceeded.
anywhere within the upper and lower spec limits.
based on production test requirements. Circuit losses have been de-embedded from actual measurements.
0
0
0.2
Symbol
= -0.2 V per step)
P
0
P
T
in max
V
V
T
V
I
θ
STG
DS
diss
GD
DS
GS
CH
-3 Std
jc
0.3
2
0.4
NF (dB)
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
V
Parameter
DS
+3 Std
4
(V)
0.5
[6]
.
0.6
6
+0.6 V
–0.6 V
[2]
0 V
0.7
[2]
8
[5]
Cpk = 3.7
Std = 0.03
[2]
[2]
[4]
[1]
[7, 8]
°C/W
Units
dBm
mW
mA
°C
°C
V
V
V
120
100
160
120
Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA.
LSL=19.0, Nominal=20.9, USL=23.0
80
60
40
20
Figure 4. Gain @ 2 GHz, 2 V, 15 mA.
LSL=16.5, Nominal=18.0, USL=19.5
80
40
0
0
19
16
-3 Std
-65 to 160
20
Maximum
Absolute
17
I
dss
300
160
150
5.5
14
-5
-5
-3 Std
[3]
OIP3 (dBm)
GAIN (dB)
21
18
+3 Std
22
+3 Std
19
Notes:
1. Operation of this device above any
2. Assumes DC quiesent conditions.
3. V
4. Source lead temperature is 25°C.
5. Thermal resistance measured using
23
one of these parameters may cause
permanent damage.
Derate 3.2 mW/°C for T
QFI Measurement method.
GS
24
20
= 0 V
Cpk = 1.73
Std = 0.35
Cpk = 2.75
Std = 0.17
L
> 67°C.