ATF-35143-BLKG Avago Technologies US Inc., ATF-35143-BLKG Datasheet - Page 5

• Manufacturer Part Number: ATF-35143-BLKG
• Description: IC PHEMT 1.9GHZ 15MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-35143-BLKG

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 18dB
• Voltage - Rated: 5.5V
• Current Rating: 80mA
• Noise Figure: 0.4dB
• Current - Test: 15mA
• Voltage - Test: 2V
• Power - Output: 10dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 300 mW
• Drain Source Voltage Vds: 5.5 V
• Gate-source Breakdown Voltage: - 5 V
• Continuous Drain Current: 80 mA
• Maximum Operating Temperature: + 160 C
• Maximum Drain Gate Voltage: - 5 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation Pd: 300mW
• Noise Figure Typ: 0.4dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Drain Current Idss Max: 15mA
• Drain-source Breakdown Voltage: 5.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1864; ATF-35143-BLKG

ATF-35143 Typical Performance Curves,
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off between
2. P
5
Figure 12. F
Figure 14. F
Temperature, V
Figure 16. OIP3, P
(Active Bias, 2V, 3.9 GHz).
1.50
1.25
1.00
0.75
0.50
0.25
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-
embedded from actual measurements.
drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
power output approaches P
constant current source as is typically done with active biasing. As an example, at a V
dBm is approached.
1dB
22
20
18
16
14
12
25
20
15
10
0
5
0
0
0
0
measurements are performed with passive biasing. Quiescent drain current, I
min
min
2
vs. Frequency and Current at 2V.
and G
20
DS
FREQUENCY (GHz)
2
FREQUENCY (GHz)
=2V, I
1dB
, NF and Gain vs. Bias
a
vs. Frequency and
4
I
DS
DS
=15 mA.
40
(mA)
4
6
1dB
. This results in higher P
60
6
8
[1]
5 mA
15 mA
30 mA
25C
-40C
85C
P
OIP3
Gain
NF
1dB
10
80
8
1.0
0.8
0.6
0.4
0.2
0
2.5
2
1.5
1
0.5
0
continued
1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a
Figure 15. OIP3 and P
Temperature
Figure 17. OIP3, P
(Active Bias, 2V, 5.8 GHz).
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
25
20
15
10
25
20
15
10
25
20
15
10
-5
5
5
0
5
0
0
0
[1,2]
2
20
2
FREQUENCY (GHz)
FREQUENCY (GHz)
, V
1dB
DS
, NF and Gain vs. Bias
1dB
=2V, I
4
I
DS
vs. Frequency and
DSQ
40
(mA)
4
DS
DS
=15 mA.
, is set with zero RF drive applied. As P
6
= 4V and I
60
6
8
[1]
5 mA
15 mA
30 mA
25C
-40C
85C
P
OIP3
Gain
NF
DSQ
1dB
= 5 mA, I
80
10
8
dsq
3
2.5
2
1.5
1
0.5
0
the device is running closer to class B as
d
increases to 30 mA as a P
1dB
is approached, the
1dB
of +15