BF1100WR,115 NXP Semiconductors, BF1100WR,115 Datasheet - Page 10

• Manufacturer Part Number: BF1100WR,115
• Description: MOSFET N-CH 14V 30MA SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF1100WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 14 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934036570115; BF1100WR T/R; BF1100WR T/R

NXP Semiconductors
1995 Apr 25
handbook, halfpage
Dual-gate MOS-FET
V
I
V
I
D
D
Fig.24 Forward transfer admittance and phase as
(mS)
DS
DS
(mS)
y fs
= 10 mA; T
= 10 mA; T
y is
10
10
10
= 12 V; V
10
= 12 V; V
10
1
1
2
2
1
10
10
Fig.22 Input admittance as a function of
a function of frequency; typical values.
amb
amb
G2
G2
= 4 V.
= 4 V.
= 25 C.
= 25 C.
frequency; typical values.
10
10
2
2
ϕ
b is
g is
y fs
fs
f (MHz)
f (MHz)
MLD187
MLD185
10
10
3
3
10
10
1
(deg)
ϕ
2
fs
10
handbook, halfpage
V
I
V
I
D
D
Fig.23 Reverse transfer admittance and phase as
(μS)
DS
DS
(mS)
y rs
= 10 mA; T
= 10 mA; T
y os
10
10
10
10
10
= 12 V; V
= 12 V; V
10
1
1
3
2
Fig.25 Output admittance as a function of
1
2
10
10
a function of frequency; typical values.
amb
amb
G2
G2
= 4 V.
= 4 V.
frequency; typical values.
= 25 C.
= 25 C.
10
10
2
ϕ
2
y rs
b os
g os
rs
f (MHz)
f (MHz)
Product specification
BF1100WR
MLD186
MLD188
10
10
3
3
10
10
10
1
(deg)
ϕ
3
rs
2