BF1100WR,115 NXP Semiconductors, BF1100WR,115 Datasheet - Page 11

• Manufacturer Part Number: BF1100WR,115
• Description: MOSFET N-CH 14V 30MA SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF1100WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 14 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934036570115; BF1100WR T/R; BF1100WR T/R

NXP Semiconductors
1995 Apr 25
handbook, full pagewidth
Dual-gate MOS-FET
For V
For V
GG
GG
= V
= V
DS
DS
= 9 V, R
= 12 V, R
G =
G =
180 k.
250 k.
R GEN
50
V I
Ω
50
R2
Ω
Fig.26 Cross-modulation test circuit.
4.7 nF
C2
V GG
10 k Ω
R1
R G
V AGC
11
4.7 nF
C1
DUT
V DS
≈
4.7 nF
L1
C3
450 nH
C4
12 pF
MGC420
R L
50 Ω
Product specification
BF1100WR