BF556C,215 NXP Semiconductors, BF556C,215 Datasheet - Page 2

• Manufacturer Part Number: BF556C,215
• Description: MOSFET N-CH 30V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF556C,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 30V
• Current Rating: 18mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: - 0.5 V to - 7.5 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Drain Current (idss At Vgs=0): 11 mA to 18 mA
• Continuous Drain Current: 18 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934021490215; BF556C T/R; BF556C T/R

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
9397 750 13393
Product data sheet
Table 2:
Table 3:
Table 4:
[1]
Pin
1
2
3
Type number
BF556A
BF556B
BF556C
Type number
BF556A
BF556B
BF556C
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Pinning
Ordering information
Marking
Description
source (s)
drain (d)
gate (g)
Package
Name
-
Rev. 03 — 5 August 2004
Description
plastic surface mounted package; 3 leads
BF556A; BF556B; BF556C
N-channel silicon junction field-effect transistors
Marking code
24*
25*
26*
Simplified outline
1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
3
SOT23
2
Symbol
g
sym054
Version
SOT23
d
s
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