BF556C NXP Semiconductors, BF556C Datasheet
BF556C
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BF556C Summary of contents
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... BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. ...
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... Marking Table 4: Type number BF556A BF556B BF556C [ made in Hong Kong made in Malaysia made in China. 9397 750 13393 Product data sheet BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Pinning Description source (s) drain (d) gate (g) Ordering information Package Name Description - plastic surface mounted package; 3 leads Marking Rev. 03 — ...
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... R th(j-a) [1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm 9397 750 13393 Product data sheet BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Limiting values Parameter Conditions drain-source voltage (DC) gate-source voltage open drain ...
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... V gate-source cut-off voltage GSoff I drain current DSS I gate-source leakage current GSS y forward transfer admittance fs y common source output os admittance 9397 750 13393 Product data sheet BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Conditions 200 BF556A BF556B ...
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... V equivalent input noise voltage DSS (mA Fig 2. Drain current as a function of gate-source cut-off voltage; typical values. 9397 750 13393 Product data sheet BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Conditions MHz MHz 100 MHz f = 450 MHz ...
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... BF556A ( ( Fig 6. Typical output characteristics. 9397 750 13393 Product data sheet BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors mrc153 300 R DSon ( ) 200 100 (V) GSoff V DS Fig 5. Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. mrc145 16 (1) ...
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... Fig 9. Typical input characteristics. mrc149 (3) ( (4) I GSS Fig 11. Gate current as a function of drain-gate voltage; typical values. Rev. 03 — 5 August 2004 (1) ( (1) (2) (4) ( only for BF556B and BF556C mA mA. = 0.1 mA. . © Koninklijke Philips Electronics N.V. 2004. All rights reserved. mrc148 0 mrc151 20 ( ...
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... DS GS Fig 12. Gate current as a function of junction temperature; typical values iss (pF Fig 14. Input capacitance; typical values. 9397 750 13393 Product data sheet BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors mrc150 C rss (pF) 100 150 Fig 13. Reverse transfer capacitance; typical values. mrc140 (mS ...
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... mA amb ( ( Fig 18. Common-source output admittance;typical values. 9397 750 13393 Product data sheet BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors mrc141 (mS (MHz (1) b (2) g Fig 17. Common-source reverse admittance; typical mrc143 V (V) (1) ( (MHz Fig 19. Equivalent noise voltage as a function of Rev. 03 — 5 August 2004 ...
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... Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig 20. Package outline. 9397 750 13393 Product data sheet BF556A; BF556B; BF556C scale 3.0 1.4 2.5 1.9 0.95 2 ...
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... Table 9: Revision history Document ID BF556A_BF556B_BF556C_3 Modifications: BF556A-B-C_2 9397 750 13393 Product data sheet BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Release Data sheet status date 20040805 Product data sheet • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors • ...
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... For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 13393 Product data sheet BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors [2] [3] Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specifi ...
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... Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 Disclaimers Contact information . . . . . . . . . . . . . . . . . . . . 12 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...