BF1207,115 NXP Semiconductors, BF1207,115 Datasheet - Page 18

• Manufacturer Part Number: BF1207,115
• Description: MOSFET N-CH DUAL GATE 6V UMT6
• Manufacturer: NXP Semiconductors

Specifications of BF1207,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 18mA
• Voltage - Test: 5V
• Configuration: Dual Dual Gate
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058936115; BF1207 T/R; BF1207 T/R

Philips Semiconductors
9. Test information
9397 750 14955
Product data sheet
Fig 29. Cross-modulation test set-up for amplifier A
Fig 30. Cross-modulation test set-up for amplifier B
R GEN
50
R GEN
V i
50
50
V i
50
50
50
4.7 nF
4.7 nF
4.7 nF
V
V
5 V
AGC
4.7 nF
4.7 nF
4.7 nF
GG
Rev. 01 — 28 July 2005
10 k
R G1
V
V
0 V
G1B
G1A
AGC
GG
G2
10 k
R G1
G1B
G1A
G2
BF1207
BF1207
DB
S
DA
V
V
DS(B)
DS(A)
5 V
5V
DB
S
DA
L1
2.2 H
L2
2.2 H
V
V
4.7 nF
4.7 nF
4.7 nF
DS(B)
DS(A)
5 V
5V
L1
2.2 H
L2
2.2 H
001aac907
4.7 nF
4.7 nF
4.7 nF
Dual N-channel dual gate MOSFET
001aac908
R L
50
R L
50
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
BF1207
18 of 22