BF1207,115 NXP Semiconductors, BF1207,115 Datasheet - Page 8

MOSFET N-CH DUAL GATE 6V UMT6

BF1207,115

Manufacturer Part Number
BF1207,115
Description
MOSFET N-CH DUAL GATE 6V UMT6
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1207,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
400MHz
Gain
30dB
Voltage - Rated
6V
Current Rating
30mA
Noise Figure
1.3dB
Current - Test
18mA
Voltage - Test
5V
Configuration
Dual Dual Gate
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
6 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
180 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934058936115
BF1207 T/R
BF1207 T/R
Philips Semiconductors
9397 750 14955
Product data sheet
Fig 6. Amplifier A: forward transfer admittance as a
Fig 8. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values
(mS)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
y
fs
40
30
20
10
0
V
function of drain current; typical values
V
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(A)
G2-S
(7)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 4 V, T
= 5 V; T
8
(6)
j
j
= 25 C, R
= 25 C.
16
(5)
G1(B)
(mA)
= 68 k (connected to ground); see
I
D
(4)
20
16
12
24
8
4
0
0
I
001aac884
D
(mA)
(3)
(1)
(2)
1
32
Rev. 01 — 28 July 2005
2
Fig 7. Amplifier A: drain current as a function of V
3
(mA)
(1) R
(2) R
(3) R
(4) R
(5) R
(6) R
(7) R
I
D
Figure
25
20
15
10
5
0
V
and V
0
G1(A)
G1(A)
G1(A)
G1(A)
G1(A)
G1(A)
G1(A)
G2-S
4
V
001aac886
3.
supply
= 4 V; T
= 39 k .
= 47 k .
= 68 k .
= 82 k .
= 100 k .
= 120 k .
= 150 k .
GG
(V)
; typical values
5
Dual N-channel dual gate MOSFET
j
= 25 C.
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4
V
GG
001aac885
V
BF1207
(1)
(2)
(3)
(4)
(5)
(6)
(7)
DS
(V)
6
8 of 22
DS

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