ATF-38143-TR1G Avago Technologies US Inc., ATF-38143-TR1G Datasheet - Page 4

• Manufacturer Part Number: ATF-38143-TR1G
• Description: IC PHEMT 1.9GHZ 4.5V 10MA SOT343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-38143-TR1G

• Gain: 16dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 4.5V
• Current Rating: 145mA
• Noise Figure: 0.4dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Power - Output: 12dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Drain Source Voltage Vds: 4.5V
• Power Dissipation Pd: 580mW
• Noise Figure Typ: 0.4dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Frequency Max: 6GHz
• Frequency Min: 450MHz
• Drain Current Idss Max: 145mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ATF-38143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V 10 mA
2. P
4
Figure 6. OIP3 and P
Figure 9. Noise Figure vs. I
0.7
0.6
0.5
0.4
0.3
0.2
0.1
bias. This circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
as power output approaches P
by a constant current source as is typically done with active biasing.
30
25
20
15
10
5
0
0
1dB
0
0
measurements are performed with passive biasing. Quiescent drain current, I
10
10
OIP3
CURRENT, I
CURRENT, I
20
20
1dB
vs. I
d
30
30
d
at 2V, 900 MHz.
P
at 2V, 2 GHz.
DS
1dB
DS
(mA)
(mA)
40
40
1dB
50
50
. This results in higher P
60
60
Figure 7. OIP3 and P
Figure 10. Associated Gain vs. I
30
25
20
15
10
22
21
20
19
18
17
16
15
5
0
0
0
1dB
and higher PAE (power added efficiency) when compared to a device that is driven
10
10
CURRENT, I
CURRENT, I
20
20
1dB
OIP3
vs. I
30
30
d
P
at 2V, 900 MHz.
DS
DS
1dB
d
at 2V, 2 GHz.
(mA)
(mA)
40
40
DSQ
50
, is set with zero RF drive applied. As P
50
60
60
Figure 11. Associated Gain vs. I
Figure 8. Noise Figure vs. I
DSQ
0.7
0.6
0.5
0.4
0.3
0.2
0.1
22
21
20
19
18
17
16
15
0
the device is running closer to class B
0
0
10
10
CURRENT, I
CURRENT, I
20
20
1dB
30
30
d
is approached, the
at 2V, 2 GHz.
DS
DS
d
at 2V, 900 MHz.
(mA)
(mA)
40
40
50
50
60
60