ATF-38143-TR1G Avago Technologies US Inc., ATF-38143-TR1G Datasheet - Page 5

• Manufacturer Part Number: ATF-38143-TR1G
• Description: IC PHEMT 1.9GHZ 4.5V 10MA SOT343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-38143-TR1G

• Gain: 16dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 4.5V
• Current Rating: 145mA
• Noise Figure: 0.4dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Power - Output: 12dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Drain Source Voltage Vds: 4.5V
• Power Dissipation Pd: 580mW
• Noise Figure Typ: 0.4dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Frequency Max: 6GHz
• Frequency Min: 450MHz
• Drain Current Idss Max: 145mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ATF-38143 Typical Performance Curves,
Notes:
1. P
5
Figure 15. P
Temperature at 2V, 10 mA.
Figure 12. F
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
as power output approaches P
by a constant current source as is typically done with active biasing.
26
24
22
20
18
16
14
12
10
0
1dB
0
0
measurements are performed with passive biasing. Quiescent drain current, I
min
1dB
2000
vs. Frequency and Current at 2V.
and OIP3 vs. Frequency and
2
FREQUENCY (GHz)
FREQUENCY (MHz)
4000
4
6000
6
1dB
10 mA
20 mA
5 mA
–40 C
+25 C
+85 C
. This results in higher P
8000
8
Figure 13. F
Temperature at 2V, 10 mA.
Figure 16. NF, Gain, P
continued
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0
0
1
10
min
1dB
G
and G
a
CURRENT, I
and higher PAE (power added efficiency) when compared to a device that is driven
FREQUENCY (GHz)
2
20
a
1dB
vs. Frequency and
3
and OIP3 vs. I
30
DS
4
F
min
(mA)
40
5
DS
50
at 2V, 3.9 GHz.
–40 C
+25 C
+85 C
6
DSQ
P
OIP3
Gain
NF
1dB
, is set with zero RF drive applied. As P
60
7
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Figure 17. NF, Gain, P
Figure 14. Associated Gain vs. Frequency and
Current at 2V.
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0
0
DSQ
the device is running closer to class B
10
2
10 mA
20 mA
5 mA
FREQUENCY (GHz)
CURRENT, I
20
4
1dB
and OIP3 vs. I
30
6
DS
1dB
(mA)
40
is approached, the
8
DS
10
50
at 2V, 5.8 GHz.
P
OIP3
Gain
NF
1dB
60
12
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0