BLF6G22-45,135 NXP Semiconductors, BLF6G22-45,135 Datasheet - Page 6
![IC BASESTATION DRIVER SOT608A](/photos/5/64/56476/sot-608a_sot608a_pkg_sml.jpg)
BLF6G22-45,135
Manufacturer Part Number
BLF6G22-45,135
Description
IC BASESTATION DRIVER SOT608A
Manufacturer
NXP Semiconductors
Specifications of BLF6G22-45,135
Package / Case
SOT-608A
Transistor Type
LDMOS
Frequency
2.11GHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
1.5µA
Current - Test
405mA
Voltage - Test
28V
Power - Output
2.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060066135
BLF6G22-45 /T3
BLF6G22-45 /T3
BLF6G22-45 /T3
BLF6G22-45 /T3
NXP Semiconductors
BLF6G22-45_2
Product data sheet
Table 8.
For test circuit, see
[1]
[2]
Component
C1, C2, C17, C18
C3, C15
C4, C5
C6, C12
C7
C8
C9
C10, C11
C13
C14
C16
R1
Fig 7.
American technical ceramics type 100A or capacitor of same quality.
American technical ceramics type 100B or capacitor of same quality.
C3
Striplines are on a double copper-clad Rogers Duroid 5880 Printed-Circuit Board (PCB) with
See
Component layout for 2110 MHz and 2170 MHz test circuit
r
List of components
C4
= 2.2 and thickness = 0.79 mm.
C2
C1
Table 8
C5
Figure 6
R1
for list of components.
Description
multilayer ceramic chip capacitor
tantalum capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
Rev. 02 — 21 April 2008
C6
and
C7
Figure
7.
Value
6.8 pF
10 F
1.5 F
10 pF
0.5 pF
1.2 pF
1.0 pF
100 nF
220 nF
4.7 F
220 F, 63 V
5.6
C8
Power LDMOS transistor
BLF6G22-45
C10
C11
C12
© NXP B.V. 2008. All rights reserved.
C13
C9
C16
[1]
[2]
[2]
[2]
[2]
C14
Remarks
C15
001aah610
C18
C17
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