BLF6G20-40,112 NXP Semiconductors, BLF6G20-40,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G20-40,112
• Description: TRANSISTOR PWR LDMOS SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-40,112

• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 18.8dB
• Voltage - Rated: 65V
• Current Rating: 13A
• Current - Test: 360mA
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: SOT-608A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060891112

NXP Semiconductors
BLF6G20-40_1
Product data sheet
Fig 1.
Fig 2.
(dB)
G
p
22
21
20
19
18
17
16
0
V
One-tone CW power gain and drain efficiency as functions of load power; typical values
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
2
DS
DS
= 1843.1 MHz.
G
= 28 V; I
= 28 V; I
D
p
5
Dq
Dq
10
= 360 mA; f = 1842 MHz.
= 360 mA; f
15
1
(dB)
= 1843 MHz;
G
20
p
22
21
20
19
18
17
16
15
0
G
25
001aaj411
D
p
P
L
(W)
10
Rev. 01 — 19 January 2009
30
60
50
40
30
20
10
0
(%)
D
20
Fig 3.
30
(dBc)
IMD
10
20
30
40
50
60
70
80
0
V
f
Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
40
2
DS
= 1843.1 MHz.
001aaj410
P
L
= 28 V; I
(W)
5
50
70
60
50
40
30
20
10
0
Dq
(%)
10
= 360 mA; f
D
15
Power LDMOS transistor
BLF6G20-40
1
= 1843 MHz;
20
IMD3
IMD5
IMD7
© NXP B.V. 2009. All rights reserved.
25
001aaj412
P
L
(W)
30
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