BLF3G22-30,135 NXP Semiconductors, BLF3G22-30,135 Datasheet - Page 6

• Manufacturer Part Number: BLF3G22-30,135
• Description: TRANSISTOR UHF PWR LDMOS SOT608
• Manufacturer: NXP Semiconductors

Specifications of BLF3G22-30,135

• Transistor Type: LDMOS
• Frequency: 2.17GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT-608A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057338135

NXP Semiconductors
BLF3G22-30_1
Product data sheet
Fig 5. Power gain and drain efficiency as functions of
Fig 7. Input impedance as function of frequency
(dB)
( )
G
Z
p
i
20
16
12
12
8
4
0
8
4
0
V
f
average load power; typical values
V
(series components); typical values
26
1
2
DS
DS
= 2115 MHz; f
= 28 V; I
= 28 V; I
7.4 Two-carrier W-CDMA
7.5 Input impedance and load impedances measured under CW
2.05
30
Dq
Dq
G
D
= 450 mA; T
= 450 mA; P
p
2
Input signals: 3GPP W-CDMA, test model 1, 1-64 DPCH with 66 % clipping;
peak-to-average power ratio: 8.5 dB at 0.01 % probability on CCDF;
channel spacing = 10 MHz; bandwidth = 3.84 MHz.
conditions
= 2165 MHz
2.1
34
h
L
= 25 C;
= 30 W; T
R
X
i
i
2.15
38
P
L(AV)
f (GHz)
001aag537
001aag539
h
(W)
25 C
2.2
42
Rev. 01 — 21 June 2007
50
40
30
20
10
0
(%)
D
Fig 6. IMD3 and ACPR as functions of average load
Fig 8. Load impedance as function of frequency
IMD3,
ACPR
(dBc)
( )
Z
L
20
40
60
0
8
4
0
4
8
V
f
power; typical values.
V
(series components); typical values
26
1
2
DS
DS
= 2115 MHz; f
= 28 V; I
= 28 V; I
2.05
30
Dq
Dq
= 450 mA; T
= 450 mA; P
2
ACPR
IMD3
= 2165 MHz
UHF power LDMOS transistor
R
X
L
L
2.1
34
BLF3G22-30
h
L
= 25 C;
= 30 W; T
2.15
38
© NXP B.V. 2007. All rights reserved.
P
L(AV)
f (GHz)
001aag538
001aag540
h
(W)
25 C
2.2
42
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