BLF3G22-30,112 NXP Semiconductors, BLF3G22-30,112 Datasheet
BLF3G22-30,112
Specifications of BLF3G22-30,112
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BLF3G22-30,112 Summary of contents
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... BLF3G22-30 UHF power LDMOS transistor Rev. 01 — 21 June 2007 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance I = 450 mA common source test circuit Mode of operation f 1 (MHz) ...
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... Ordering information Package Name Description - flanged ceramic package; 2 mounting holes; 2 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Rev. 01 — 21 June 2007 BLF3G22-30 UHF power LDMOS transistor Simplified outline Symbol 1 [ Min Max - ...
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... MHz 450 power gain input return loss drain efficiency third order intermodulation distortion adjacent channel power ratio P Rev. 01 — 21 June 2007 BLF3G22-30 UHF power LDMOS transistor Conditions Conditions Min Typ Max Unit = 0 ...
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... NXP Semiconductors 7.1 Ruggedness in class-AB operation The BLF3G22-30 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 450 mA 7.2 One-tone Fig 1. Power gain and drain efficiency as functions of average load power; typical values 7.3 Two-tone Fig 2. Power gain and drain efficiency as functions of peak envelope load power; typical ...
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... Fig 3. Intermodulation distortion as function of peak envelope load power; typical values BLF3G22-30_1 Product data sheet 001aag541 IMD3 (dBc (W) L(PEP (1) I (2) I (3) I Fig 4. IMD3 as function of peak envelope load power; Rev. 01 — 21 June 2007 BLF3G22-30 UHF power LDMOS transistor 0 30 (1) ( L(PEP 2170 MHz; DS ...
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... D IMD3, (%) ACPR 40 (dBc (W) L(AV Fig 6. IMD3 and ACPR as functions of average load 001aag539 ( ) 2.15 2.2 f (GHz Fig 8. Load impedance as function of frequency Rev. 01 — 21 June 2007 BLF3G22-30 UHF power LDMOS transistor IMD3 ACPR 450 mA 2115 MHz 2165 MHz 1 2 power; typical values ...
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... R1 C3 input Fig 9. Class-AB test circuit BLF3G22-30_1 Product data sheet L11 L12 Rev. 01 — 21 June 2007 BLF3G22-30 UHF power LDMOS transistor L1 C13 C17 C14 C19 C11 output L9 L10 50 C12 C9 C10 C16 C18 C15 © NXP B.V. 2007. All rights reserved C20 ...
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... Teflon dielectric ( = 2.2); thickness = 0.79 mm. r The other side is unetched and serves as a ground plane. See Table 8 for list of components. Rev. 01 — 21 June 2007 BLF3G22-30 UHF power LDMOS transistor BLF3G22-30 testjig output C13 C17 C20 C14 L1 C19 C11 C12 C9 C10 C15 ...
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... F 1 100 [3] 50 [3] 43 [3] 29 [3] 10 [3] 56 [3] 9 [3] 29 [3] 41 [3] 50 [3] 17 Rev. 01 — 21 June 2007 BLF3G22-30 UHF power LDMOS transistor Dimensions Catalogue No. TDK C3225X7R1H155M 2 loops diameter 18 2 2.2); thickness = 0.79 mm. r © NXP B.V. 2007. All rights reserved. ...
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... REFERENCES JEDEC EIAJ Rev. 01 — 21 June 2007 BLF3G22-30 UHF power LDMOS transistor 1.70 20.45 9.91 15.24 0.25 0.51 1 ...
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... Laterally Diffused Metal Oxide Semiconductor Radio Frequency Ultra High Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access Data sheet status Product data sheet Rev. 01 — 21 June 2007 BLF3G22-30 UHF power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2007. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 21 June 2007 BLF3G22-30 UHF power LDMOS transistor © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 June 2007 Document identifier: BLF3G22-30_1 ...