BLF6G20-75,112 NXP Semiconductors, BLF6G20-75,112 Datasheet - Page 10

• Manufacturer Part Number: BLF6G20-75,112
• Description: TRANSISTOR PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-75,112

• Transistor Type: LDMOS
• Frequency: 1.93GHz ~ 1.99GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 29.5W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061249112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G20-75_BLF6G20LS-75_2
Product data sheet
Document ID
BLF6G20-75_BLF6G20LS-75_2 20090209
Modifications:
BLF6G20-75_1
BLF6G20LS-75_1
Revision history
Table 9.
Acronym
CDMA
CW
EDGE
EVM
GSM
LDMOS
LDMOST
RF
RMS
VSWR
W-CDMA
Release date
20080306
20080218
•
•
•
•
Abbreviations
The document now describes both the eared and earless version of this product:
BLF6G20-75 and BLF6G20LS-75 respectively
Table 7 on page
Table 7 on page
Table 7 on page
Description
Code Division Multiple Access
Continuous Wave
Enhanced Data rates for GSM Evolution
Error Vector Magnitude
Global System for Mobile communications
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Root Mean Square
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 02 — 9 February 2009
Data sheet status
Product data sheet
Preliminary data sheet
Preliminary data sheet
3: changed the minimum value for
3: changed the maximum value for EVM
3: changed the maximum value for EVM
BLF6G20-75; BLF6G20LS-75
Change notice
-
-
-
D
Power LDMOS transistor
rms
M
Supersedes
BLF6G20-75_1
BLF6G20LS-75_1
-
-
© NXP B.V. 2009. All rights reserved.
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