BLF3G22-30,112 NXP Semiconductors, BLF3G22-30,112 Datasheet - Page 11

• Manufacturer Part Number: BLF3G22-30,112
• Description: TRANSISTOR UHF PWR LDMOS SOT608
• Manufacturer: NXP Semiconductors

Specifications of BLF3G22-30,112

• Transistor Type: LDMOS
• Frequency: 2.17GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT-608A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 4.5A
• Drain Source Voltage (max): 65V
• Output Power (max): 6W(Typ)
• Power Gain (typ)@vds: 14@28V/15@28VdB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 3S
• Drain Source Resistance (max): 300(Typ)mohm
• Reverse Capacitance (typ): 1.7@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 24%
• Mounting: Screw
• Mode Of Operation: 2-Tone CW/2-Tone W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934057338112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF3G22-30_1
Product data sheet
Document ID
BLF3G22-30_1
Revision history
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
LDMOS
RF
UHF
VSWR
W-CDMA
Release date
20070621
Abbreviations
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Radio Frequency
Ultra High Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Data sheet status
Product data sheet
Rev. 01 — 21 June 2007
Change notice
-
UHF power LDMOS transistor
BLF3G22-30
Supersedes
-
© NXP B.V. 2007. All rights reserved.
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