BLF7G22LS-130,112 NXP Semiconductors, BLF7G22LS-130,112 Datasheet - Page 12

• Manufacturer Part Number: BLF7G22LS-130,112
• Description: TRANSISTOR PWR LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-130,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063501112

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 11.
BLF7G22L-130_7G22LS-130
Product data sheet
Document ID
BLF7G22L-130_7G22LS-130 v.4
Modifications:
BLF7G22L-130_7G22LS-130 v.3
BLF7G22L-130_7G22LS-130 v.2
BLF7G22LS-130 v.1
Revision history
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
ESD
LDMOS
LDMOST
PAR
RF
SMD
VSWR
W-CDMA
Abbreviations
Release date
20110120
20101118
20101004
20100202
•
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Table 7 on page
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Surface Mounted Device
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLF7G22L-130; BLF7G22LS-130
Rev. 4 — 20 January 2011
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
3: the maximum value of RL
Change notice
-
-
-
-
in
has been corrected to −9 dB.
Power LDMOS transistor
Supersedes
BLF7G22LS-130 v.3
BLF7G22LS-130 v.2
BLF7G22LS-130 v.1
-
© NXP B.V. 2011. All rights reserved.
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