BLF7G22LS-130,112 NXP Semiconductors, BLF7G22LS-130,112 Datasheet - Page 3

• Manufacturer Part Number: BLF7G22LS-130,112
• Description: TRANSISTOR PWR LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-130,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063501112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G22L-130_7G22LS-130
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f
RF performance at V
class-AB production test circuit.
The BLF7G22L-130 and BLF7G22LS-130 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
G
RL
η
ACPR
DSS
DSX
GSS
j
DS
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
p
= 25
in
= 28 V; I
°
C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Parameter
thermal resistance from junction to case
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Thermal characteristics
Characteristics
Functional test information
Dq
= 950 mA; P
All information provided in this document is subject to legal disclaimers.
1
DS
= 2112.5 MHz; f
BLF7G22L-130; BLF7G22LS-130
= 28 V; I
Rev. 4 — 20 January 2011
L
Dq
= 130 W (CW); f = 2110 MHz.
= 950 mA; T
2
= 2117.5 MHz; f
Conditions
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
case
= 5.25 A
= 30 W
= 30 W
= 30 W
= 30 W
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 25
GS(th)
GS(th)
3
Conditions
T
°
= 2162.5 MHz; f
D
case
C; unless otherwise specified; in a
DS
D
D
= 1.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 150 mA
= 7.5 A
= 28 V
= 80 °C; P
= 0 V
Power LDMOS transistor
Min
-
17
-
29
-
L
4
= 30 W
Min Typ
65
1.3
-
25
-
-
-
= 2167.5 MHz;
Typ Max
30
18.5 -
−15 −9
32
−31 −28
© NXP B.V. 2011. All rights reserved.
-
1.8
-
29.5
-
10
0.1
-
-
Typ
0.35 K/W
Max Unit
-
2.3
5
-
450
11
0.16 Ω
Unit
W
dB
dB
%
dBc
3 of 15
Unit
V
V
μA
A
nA
S