BLF7G22LS-130,112 NXP Semiconductors, BLF7G22LS-130,112 Datasheet - Page 5
![TRANSISTOR PWR LDMOS SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF7G22LS-130,112
Manufacturer Part Number
BLF7G22LS-130,112
Description
TRANSISTOR PWR LDMOS SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF7G22LS-130,112
Transistor Type
LDMOS
Frequency
2.11GHz ~ 2.17GHz
Gain
18.5dB
Voltage - Rated
65V
Current - Test
950mA
Voltage - Test
28V
Power - Output
30W
Package / Case
SOT502B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063501112
NXP Semiconductors
BLF7G22L-130_7G22LS-130
Product data sheet
Fig 2.
Fig 4.
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
p
19
18
17
16
15
14
0
V
Power gain as a function of load power;
typical values
V
Input return loss as a function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
(1)
(2)
(3)
7.3 1 Tone CW
40
Dq
Dq
= 950 mA.
= 950 mA.
80
RL
(dB)
−10
−20
−30
in
120
0
0
All information provided in this document is subject to legal disclaimers.
P
001aal341
L
(W)
10
BLF7G22L-130; BLF7G22LS-130
160
Rev. 4 — 20 January 2011
20
30
Fig 3.
40
(%)
η
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
D
50
60
40
20
0
0
V
Drain efficiency as a function of load power;
typical values
P
DS
L
001aal352
60
(W)
= 28 V; I
(1)
(2)
(3)
70
40
Dq
= 950 mA.
80
Power LDMOS transistor
(1)
(2)
(3)
120
© NXP B.V. 2011. All rights reserved.
P
001aal342
L
(W)
160
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