BLD6G22L-50,112 NXP Semiconductors, BLD6G22L-50,112 Datasheet - Page 6

• Manufacturer Part Number: BLD6G22L-50,112
• Description: TRANS DOHERTY W/CDMA SOT1130A
• Manufacturer: NXP Semiconductors

Specifications of BLD6G22L-50,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 13.3dB
• Voltage - Rated: 65V
• Current Rating: 10.2A
• Current - Test: 170mA
• Voltage - Test: 28V
• Power - Output: 8W
• Package / Case: SOT1130A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063511112

NXP Semiconductors
BLD6G22L-50_BLD6G22LS-50
Product data sheet
Fig 5.
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
p
15
13
11
9
30
V
V
Power gain as a function of load power;
typical values
DS
GS(amp)peak
= 28 V; I
= 0 V; = 10 %; t
Dq
36
= 170 mA (main); T
Fig 7.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
V
1 ms period.
Input return loss as a function of load power; typical values
42
p
DS
= 100 s on 1 ms period.
= 28 V; I
(1)
(2)
(3)
P
case
L
All information provided in this document is subject to legal disclaimers.
001aam440
(dBm)
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
= 25 C;
Dq
RL
(dB)
= 170 mA (main); T
48
Rev. 3 — 17 August 2010
in
50
40
30
20
10
BLD6G22L-50; BLD6G22LS-50
0
30
Fig 6.
case
36
(%)
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
D
60
40
20
(1)
(2)
(3)
= 25 C; V
0
30
V
V
Drain efficiency as a function of load power;
typical values
DS
GS(amp)peak
= 28 V; I
GS(amp)peak
42
= 0 V; = 10 %; t
Dq
P
36
L
= 170 mA (main); T
001aam442
(dBm)
= 0 V;
48
= 10 %; t
42
p
= 100 s on 1 ms period.
P
© NXP B.V. 2010. All rights reserved.
case
L
p
001aam441
(dBm)
= 100 s on
= 25 C;
(1)
(2)
(3)
48
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