BLD6G22L-50,112 NXP Semiconductors, BLD6G22L-50,112 Datasheet - Page 9

• Manufacturer Part Number: BLD6G22L-50,112
• Description: TRANS DOHERTY W/CDMA SOT1130A
• Manufacturer: NXP Semiconductors

Specifications of BLD6G22L-50,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 13.3dB
• Voltage - Rated: 65V
• Current Rating: 10.2A
• Current - Test: 170mA
• Voltage - Test: 28V
• Power - Output: 8W
• Package / Case: SOT1130A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063511112

NXP Semiconductors
9. Test information
BLD6G22L-50_BLD6G22LS-50
Product data sheet
Table 10.
See
[1]
Component
C1, C3, C5, C18
C2, C4, C12, C15
C6
C7, C8
C9, C10
C11, C13, C14, C16
C17
C21
L1, L2
R1
R2
R3
Fig 13. Component layout
V
American Technical Ceramics type 100B or capacitor of same quality.
Figure 13
GS(amp)peak
BLD6G22L-50-V3
C1
V
The striplines are on a double copper-clad gold plated Rogers 4350B Printed-Circuit Board (PCB)
with
See
GS(amp)main
List of components
INPUT
Table 10
for component layout.
r
C3
C2
= 3.5 and thickness = 0.76 mm.
All information provided in this document is subject to legal disclaimers.
R1
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
C21
for list of components.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
copper wire
SMD resistor
SMD resistor
SMD resistor
multilayer ceramic chip capacitor
Rev. 3 — 17 August 2010
BLD6G22L-50; BLD6G22LS-50
C4
R2
R3
C5
C10
C9
Value
9.1 pF
100 nF
470 F; 63 V
10 F
1.2 pF
8.2 pF
0.8 pF
1.0 pF
-
3.6
33
10
L2
C7
C8
L1
C17
C16
C11
C12
C13
C14
C15
C6
[1]
[1]
[1]
[1]
[1]
BLD6G22L-50-V3
Dimensions
diameter = 0.8 mm;
length = 8 mm
1206
1206
1206
© NXP B.V. 2010. All rights reserved.
V
OUTPUT
DD
C18
001aal154
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