BLF246B,112 NXP Semiconductors, BLF246B,112 Datasheet - Page 10
![TRANSISTOR RF DMOS SOT161A](/photos/5/64/56481/568-sot-161a_sml.jpg)
BLF246B,112
Manufacturer Part Number
BLF246B,112
Description
TRANSISTOR RF DMOS SOT161A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF246B112.pdf
(14 pages)
Specifications of BLF246B,112
Package / Case
SOT-161A
Transistor Type
2 N-Channel (Dual)
Frequency
175MHz
Gain
19dB
Voltage - Rated
65V
Current Rating
8A
Current - Test
50mA
Voltage - Test
28V
Power - Output
60W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.75 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8 A
Power Dissipation
130 W
Maximum Operating Temperature
+ 200 C
Application
VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
60W
Power Gain (typ)@vds
19@28VdB
Frequency (max)
175MHz
Package Type
CDFM
Pin Count
8
Forward Transconductance (typ)
1.8S
Drain Source Resistance (max)
750@10Vmohm
Input Capacitance (typ)@vds
125@28VpF
Output Capacitance (typ)@vds
75@28VpF
Reverse Capacitance (typ)
11@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
65%
Mounting
Screw
Mode Of Operation
CW Class-B
Number Of Elements
2
Power Dissipation (max)
130000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2403
934001090112
BLF246B
BLF246B
934001090112
BLF246B
BLF246B
Philips Semiconductors
2003 Aug 04
handbook, full pagewidth
VHF push-pull power MOS transistor
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane.
Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
110
strap
strap
L1
rivet
L3
L2
Fig.12 Component layout for 175 MHz class-B test circuit.
C1
C2
C3
L4
L5
C4
rivet
rivet
C5
C10
R2
C7
C8
R1
C9
L6
strap
strap
L7
V G
V G
C6
200
L10
L11
10
L8
L9
strap
strap
C16
C15
C17
C14
L15
L12
L16
L17
L14
L13
C22
C21
C19
C11
R3
R7
V D
V D
L18
L19
C12
C20
C13
C18
rivet
rivet
C23
C24
L20
L21
C25
C26
L23
L22
rivet
L24
MGR750
strap
strap
Product specification
BLF246B