BLF246B,112 NXP Semiconductors, BLF246B,112 Datasheet - Page 6

• Manufacturer Part Number: BLF246B,112
• Description: TRANSISTOR RF DMOS SOT161A
• Manufacturer: NXP Semiconductors

Specifications of BLF246B,112

• Package / Case: SOT-161A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 8A
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 60W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.75 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 60W
• Power Gain (typ)@vds: 19@28VdB
• Frequency (max): 175MHz
• Package Type: CDFM
• Pin Count: 8
• Forward Transconductance (typ): 1.8S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 11@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 2
• Power Dissipation (max): 130000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2403; 934001090112; BLF246B; BLF246B

Philips Semiconductors
APPLICATION INFORMATION
RF performance in CW operation in a push-pull, common source, class-B circuit. T
unless otherwise specified.
Ruggedness in class-B operation
The BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: V
2003 Aug 04
handbook, halfpage
CW, class-B
VHF push-pull power MOS transistor
MODE OF OPERATION
V
Fig.8
GS
(pF)
C rs
= 0; f = 1 MHz.
24
18
12
6
0
0
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
10
DS
= 28 V; f = 175 MHz at rated output power.
20
(MHz)
175
f
30
V DS (V)
MGR743
40
V
(V)
28
DS
6
2
(mA)
I
DQ
50
(W)
P
60
L
h
= 25 C; R
typ. 19
(dB)
G
14
p
th mb-h
Product specification
= 0.25 K/W;
BLF246B
typ. 65
(%)
55
D