BLF6G38LS-100,112 NXP Semiconductors, BLF6G38LS-100,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G38LS-100,112
• Description: IC WIMAX 3.8GHZ 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 3.4GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 34A
• Current - Test: 1.05A
• Voltage - Test: 28V
• Power - Output: 18.5W
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.18 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.9 A
• Power Dissipation: 57.7 W
• Maximum Operating Temperature: + 175 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 130W(Typ)
• Power Gain (typ)@vds: 13@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 12S
• Drain Source Resistance (max): 150@6.15Vmohm
• Reverse Capacitance (typ): 2.6@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 21.5%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061301112; BLF6G38LS-100; BLF6G38LS-100

NXP Semiconductors
BLF6G38-100_6G38LS-100_1
Product data sheet
Fig 1.
EVM
(%)
10
8
6
4
2
0
10
V
EVM as a function of load power;
typical values
DS
1
= 28 V; I
7.2.1 WiMAX signal description
7.2.2 Graphs
7.2 NXP WiMAX signal
Dq
1
= 1050 mA; f = 3500 MHz.
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = T
FFT = 1024; zone type = PUSC; = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol
Table 8.
Frame contents
Zone 0
Zone 0
Zone 0
FCH
data
data
10
Frame structure
P
2 symbols
2 symbols
44 symbols
L
001aaj033
(W)
Rev. 01 — 11 November 2008
10
30 subchannels; P
BLF6G38-100; BLF6G38LS-100
2
4 subchannels
26 subchannels
30 subchannels
Fig 2.
(dB)
G
P
18
16
14
12
10
L
10
= P
V
Power gain and drain efficiency as function of
average load power; typical values
1
DS
L(nom)
= 28 V; I
Modulation technique
QPSK1/2
64QAM3/4
64QAM3/4
+ 3.86 dB.
Dq
WiMAX power LDMOS transistor
1
= 1050 mA; f = 3500 MHz.
G
D
P
10
g
/ T
P
L(AV)
© NXP B.V. 2008. All rights reserved.
b
= 1 / 8;
001aaj034
(W)
Data length
3 bit
692 bit
10000 bit
10
2
40
30
20
10
0
(%)
D
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