BLF6G38LS-100,112 NXP Semiconductors, BLF6G38LS-100,112 Datasheet - Page 5
![IC WIMAX 3.8GHZ 2-LDMOST](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G38LS-100,112
Manufacturer Part Number
BLF6G38LS-100,112
Description
IC WIMAX 3.8GHZ 2-LDMOST
Manufacturer
NXP Semiconductors
Specifications of BLF6G38LS-100,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
3.4GHz
Gain
13dB
Voltage - Rated
65V
Current Rating
34A
Current - Test
1.05A
Voltage - Test
28V
Power - Output
18.5W
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.18 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.9 A
Power Dissipation
57.7 W
Maximum Operating Temperature
+ 175 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
130W(Typ)
Power Gain (typ)@vds
13@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.6GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
12S
Drain Source Resistance (max)
150@6.15Vmohm
Reverse Capacitance (typ)
2.6@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
21.5%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934061301112
BLF6G38LS-100
BLF6G38LS-100
BLF6G38LS-100
BLF6G38LS-100
NXP Semiconductors
BLF6G38-100_6G38LS-100_1
Product data sheet
Fig 3.
Fig 4.
(dB)
G
P
16
14
12
10
8
6
3400
V
Adjacent channel power ratio as a function of average load power; typical values
V
PAR = 9.7 dB at 0.01 % probability.
Power gain and drain efficiency as function of
frequency; typical values
DS
DS
= 28 V; I
= 28 V; I
7.3.1 Graphs
7.3 Single carrier NA IS-95 broadband performance at 2 W average
3450
Dq
Dq
= 1050 mA; f = 3500 MHz.
= 1050 mA; Single Carrier IS-95;
3500
G
D
P
ACPR
(dBc)
25
35
45
55
65
3550
10
1
f (MHz)
001aaj037
Rev. 01 — 11 November 2008
3600
BLF6G38-100; BLF6G38LS-100
25
24
23
22
21
20
(%)
1
D
Fig 5.
ACPR
(dBc)
(1) Low frequency component
(2) High frequency component
10
40
50
60
70
3400
P
L(AV)
V
PAR = 9.7 dB at 0.01 % probability.
Adjacent channel power ratio as a function of
frequency; typical values
ACPR
ACPR
ACPR
DS
ACPR
ACPR
ACPR
001aaj036
= 28 V; I
(W)
10M
20M
30M
3440
1500k
1980k
885k
10
2
Dq
WiMAX power LDMOS transistor
= 1050 mA; single carrier IS-95;
3480
3520
(1)
(2)
(1)
(2)
(2)
(1)
3560
© NXP B.V. 2008. All rights reserved.
001aaj039
f (MHz)
3600
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