BLF6G38LS-100,112 NXP Semiconductors, BLF6G38LS-100,112 Datasheet - Page 7

• Manufacturer Part Number: BLF6G38LS-100,112
• Description: IC WIMAX 3.8GHZ 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 3.4GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 34A
• Current - Test: 1.05A
• Voltage - Test: 28V
• Power - Output: 18.5W
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.18 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.9 A
• Power Dissipation: 57.7 W
• Maximum Operating Temperature: + 175 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 130W(Typ)
• Power Gain (typ)@vds: 13@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 12S
• Drain Source Resistance (max): 150@6.15Vmohm
• Reverse Capacitance (typ): 2.6@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 21.5%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061301112; BLF6G38LS-100; BLF6G38LS-100

NXP Semiconductors
8. Test information
BLF6G38-100_6G38LS-100_1
Product data sheet
Table 9.
For test circuit, see
Table 10.
Component
C1, C4, C5, C11
C2
C3
C6, C7
C8
C9
C10
L1
R1, R2, R3
f
(GHz)
3.4
3.5
3.6
Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
thickness = 0.76 mm.
See
List of components
Measured test circuit impedances
Table 9
BLF6G38-100
Input Rev 2
30RF35
NXP
C3
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
SMD resistor
Figure
for list of components.
Rev. 01 — 11 November 2008
C1
BLF6G38-100; BLF6G38LS-100
10.
R1
C2
Z
( )
0.34 + j3.36
0.52 + j3.86
1.36 + j4.85
i
C4
PCB1
R2
C5
Value
10 pF
0.2 pF
4.7 F; 50 V
100 nF
10 F; 50V
1.5 F; 50V
470 F; 63 V
-
9.1
C7
C6
WiMAX power LDMOS transistor
BLF6G38-100
Output Rev 2
30RF35
NXP
C8
C11
Z
( )
0.44 + j3.39
0.56 + j3.91
1.38 + j5.11
o
Remarks
ATC 100A
ATC 100A
TDK C4532X7R1H475M
Vishay VJ1206Y104KXB
TDK C5750X7R1H106M
TDK C3225X7R1H155M
SMD 1206
L1
R3
© NXP B.V. 2008. All rights reserved.
C9
001aaj048
PCB2
C10
r
= 3.5 and
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