BLL6H0514-25,112 NXP Semiconductors, BLL6H0514-25,112 Datasheet - Page 2

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BLL6H0514-25,112

Manufacturer Part Number
BLL6H0514-25,112
Description
TRANSISTOR LDMOS DRIVER SOT467C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLL6H0514-25,112

Transistor Type
LDMOS
Frequency
1.2GHz
Gain
21dB
Voltage - Rated
100V
Current Rating
2.5A
Current - Test
50mA
Voltage - Test
50V
Power - Output
25W
Package / Case
SOT467C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063448112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLL6H0514-25,112
Manufacturer:
HITTITE
Quantity:
1 400
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLL6H0514-25_4
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLL6H0514-25
Symbol
V
V
I
T
Symbol
Z
T
D
stg
j
th(j-c)
DS
GS
Connected to flange.
Parameter
transient thermal impedance from
junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 04 — 30 March 2010
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
Conditions
[1]
Conditions
T
Simplified outline
case
t
t
t
t
p
p
p
p
= 100 μs; δ = 10 %
= 200 μs; δ = 10 %
= 300 μs; δ = 10 %
= 100 μs; δ = 20 %
= 85 °C; P
1
2
BLL6H0514-25
L
LDMOS driver transistor
= 25 W
3
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
Max
100
+13
2.5
+150
200
sym112
Typ
0.86
1.11
1.29
1.15
Version
SOT467C
1
3
2 of 12
Unit
K/W
K/W
K/W
K/W
Unit
V
V
A
°C
°C

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