BLS6G3135-20,112 NXP Semiconductors, BLS6G3135-20,112 Datasheet - Page 5

• Manufacturer Part Number: BLS6G3135-20,112
• Description: TRANS LDMOS 3.5GHZ SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-20,112

• Package / Case: SOT-608A
• Transistor Type: LDMOS
• Frequency: 3.1GHz ~ 3.5GHz
• Gain: 15.5dB
• Voltage - Rated: 60V
• Current Rating: 2.1A
• Current - Test: 50mA
• Voltage - Test: 32V
• Power - Output: 20W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: S-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 60V
• Output Power (max): 20W(Typ)
• Power Gain (typ)@vds: 15.5@32VdB
• Frequency (min): 3.1GHz
• Frequency (max): 3.5GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 2.8S
• Drain Source Resistance (max): 580mohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 45%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934060062112; BLS6G3135-20; BLS6G3135-20

NXP Semiconductors
BLS6G3135-20_6G3135S-20_3
Product data sheet
Fig 2.
Fig 4.
(dB)
(%)
G
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
D
p
17
15
13
11
60
50
40
30
20
10
9
7
3
0
V
P
Power gain and drain efficiency as functions of
frequency; typical values
V
Efficiency as a function of load power; typical
values
DS
L
DS
= 20 W.
= 32 V; I
= 32 V; I
7.3 Graphs
Dq
Dq
3.2
10
= 50 mA; t
= 50 mA; t
G
p
p
D
p
= 300 s; = 10 %;
= 300 s; = 10 %.
3.4
20
(1)
f (GHz)
P
L
001aaf983
001aaf985
(W)
(2)
(3)
BLS6G3135-20; BLS6G3135S-20
3.6
30
Rev. 03 — 3 March 2009
50
40
30
20
10
0
(%)
D
Fig 3.
Fig 5.
(dB)
(W)
G
P
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
L
p
17
15
13
11
30
20
10
9
7
0
0
V
Power gain as a function of load power; typical
values
0
V
Load power as a function of input power;
typical values
DS
DS
= 32 V; I
= 32 V; I
LDMOS S-Band radar power transistor
Dq
Dq
0.4
10
= 50 mA; t
= 50 mA; t
p
p
= 300 s; = 10 %.
= 300 s; = 10 %.
(2) (3)
0.8
20
© NXP B.V. 2009. All rights reserved.
P
P
L
i
001aaf984
001aaf986
(W)
(W)
(1)
(2)
(3)
(1)
1.2
30
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