BLS6G3135-20,112 NXP Semiconductors, BLS6G3135-20,112 Datasheet - Page 8

• Manufacturer Part Number: BLS6G3135-20,112
• Description: TRANS LDMOS 3.5GHZ SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-20,112

• Package / Case: SOT-608A
• Transistor Type: LDMOS
• Frequency: 3.1GHz ~ 3.5GHz
• Gain: 15.5dB
• Voltage - Rated: 60V
• Current Rating: 2.1A
• Current - Test: 50mA
• Voltage - Test: 32V
• Power - Output: 20W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: S-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 60V
• Output Power (max): 20W(Typ)
• Power Gain (typ)@vds: 15.5@32VdB
• Frequency (min): 3.1GHz
• Frequency (max): 3.5GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 2.8S
• Drain Source Resistance (max): 580mohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 45%
• Mounting: Screw
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934060062112; BLS6G3135-20; BLS6G3135-20

NXP Semiconductors
9. Package outline
Fig 11. Package outline SOT608A
BLS6G3135-20_6G3135S-20_3
Product data sheet
Flanged ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT608A
0.182
0.148
4.62
3.76
A
H
0.285
0.275
7.24
6.99
b
U 2
A
A
0.006
0.004
0.15
0.10
c
IEC
10.21
10.01
0.402
0.394
D
10.29
10.03
0.405
0.395
D 1
10.21
10.01
0.402
0.394
JEDEC
E
U 1
D 1
D
q
b
BLS6G3135-20; BLS6G3135S-20
10.29
10.03
0.405
0.395
REFERENCES
E 1
1
2
Rev. 03 — 3 March 2009
3
0
0.045
0.035
1.14
0.89
F
w 2
15.75
14.73
0.620
0.580
EIAJ
H
scale
M
5
C
C
0.130
0.115
3.30
2.92
M
p
F
B
p
10 mm
0.067
0.053
1.70
1.35
Q
w 1
15.24
0.600
LDMOS S-Band radar power transistor
M
q
A
M
20.45
20.19
0.805
0.795
U 1
B
M
PROJECTION
0.390
0.380
EUROPEAN
9.91
9.65
U 2
E 1
0.010 0.020
0.25
w 1
c
Q
0.51
w 2
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
01-02-22
02-02-11
E
SOT608A
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