MW6S010GNR1 Freescale Semiconductor, MW6S010GNR1 Datasheet

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MW6S010GNR1

Manufacturer Part Number
MW6S010GNR1
Description
MOSFET RF N-CH 28V 10W TO270-2GW
Manufacturer
Freescale Semiconductor
Datasheets

Specifications of MW6S010GNR1

Transistor Type
N-Channel
Frequency
960MHz
Gain
18dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
125mA
Voltage - Test
28V
Power - Output
10W
Package / Case
TO-270-2 Gull Wing
Drain Source Voltage Vds
68V
Power Dissipation Pd
10W
Operating Frequency Range
450MHz To 1500MHz
Operating Temperature Range
-10°C To +150°C
Rohs Compliant
Yes
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Power Gain (typ)@vds
20dB
Frequency (min)
450MHz
Frequency (max)
1.5GHz
Package Type
TO-270 EP
Pin Count
3
Input Capacitance (typ)@vds
23@28VpF
Output Capacitance (typ)@vds
10@28VpF
Reverse Capacitance (typ)
0.32@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
33%
Mounting
Surface Mount
Mode Of Operation
2-Tone
Number Of Elements
1
Power Dissipation (max)
61400mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW6S010GNR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two - Tone Performance @ 960 MHz, V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this
part replacement. N suffix indicates RoHS compliant part.
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for Class A or Class AB base station applications with frequencies
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
125 mA, P
Output Power
Derate above 25°C
Case Temperature 80°C, 10 W PEP
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
= 10 Watts PEP
C
= 25°C
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
BROADBAND RF POWER MOSFETs
D
J
MW6S010GMR1
450 - 1500 MHz, 10 W, 28 V
Document Number: MW6S010
MW6S010MR1
LATERAL N - CHANNEL
CASE 1265A - 02, STYLE 1
MW6S010MR1 MW6S010GMR1
CASE 1265 - 08, STYLE 1
TO - 270 - 2 GULL
MW6S010GMR1
- 65 to +175
Value
- 0.5, +68
- 0.5, +12
MW6S010MR1
Value
PLASTIC
61.4
0.35
2.85
TO - 270 - 2
200
PLASTIC
(1.2)
Rev. 2, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
W
1

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MW6S010GNR1 Summary of contents

Page 1

... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...

Page 2

... Vdc — 0.27 0.35 Vdc — 23 — pF — 10 — pF — 0.32 — PEP 960 MHz, out 17 — % — dBc — 150 mA PEP, DQ out — 20 — dB — 33 — % — — dBc — — Device Data Freescale Semiconductor ...

Page 3

... Figure 1. MW6S010MR1(GMR1) Test Circuit Schematic — 900 MHz Table 6. MW6S010MR1(GMR1) Test Circuit Component Designations and Values — 900 MHz Part B1 C1, C6, C11, C20 C2, C18, C19 C3, C16 C4, C15 C5, C8, C17 C7, C12 C9, C10, C13 C14 Device Data Freescale Semiconductor C11 C12 C6 C7 C10 C13 L1 DUT 0.313″ ...

Page 4

... MW6S010N Figure 2. MW6S010MR1(GMR1) Test Circuit Component Layout — 900 MHz MW6S010MR1 MW6S010GMR1 4 C7 C10 C11 C18 C16 C15 C19 C13 C12 C20 C17 C14 RF Device Data Freescale Semiconductor ...

Page 5

... Order −35 −40 5th Order −45 −50 7th Order −55 0.1 1 TWO −TONE SPACING (MHz) Figure 6. Intermodulation Distortion Products versus Tone Spacing RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 900 MHz η D IRL Vdc (Avg.) DD out I = 125 mA, 100 kHz Tone Spacing DQ ...

Page 6

... Vdc out I = 125 500 600 Figure 11. Broadband Frequency Response −10 −20 −30 −40 −50 − 25_C 85_C Vdc 125 100 S21 S11 700 800 900 1000 1100 1200 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor 5 0 −5 −10 −15 −20 −25 ...

Page 7

... Figure 12. MTTF Factor versus Junction Temperature RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 100 110 120 130 140 150 160 170 180 190 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ± ...

Page 8

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Test Network Z Z source load Output Matching Network RF Device Data Freescale Semiconductor ...

Page 9

... Figure 14. MW6S010MR1(GMR1) Test Circuit Schematic — 450 MHz Table 7. MW6S010MR1(GMR1) Test Circuit Component Designations and Values — 450 MHz Part B1 C2, C15 C3, C14 C4, C9, C10, C13 C5 C6, C11 C7, C8, C12 Device Data Freescale Semiconductor DUT 0.475″ x 0.330″ Microstrip Z6 0.475″ x 0.325″ Microstrip Z8 1.250″ ...

Page 10

... MW6S010N 450 MHz Figure 15. MW6S010MR1(GMR1) Test Circuit Component Layout — 450 MHz MW6S010MR1 MW6S010GMR1 C14 C15 C13 C12 C10 C11 RF Device Data Freescale Semiconductor ...

Page 11

... out I = 150 100 150 200 250 300 350 400 450 500 f, FREQUENCY (MHz) Figure 18. Broadband Frequency Response RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 450 MHz Vdc (Avg.), I = 150 mA DD out DQ 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8 ...

Page 12

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Matching Under Network Test Z Z source load Output Matching Network RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MW6S010MR1 MW6S010GMR1 13 ...

Page 14

... MW6S010MR1 MW6S010GMR1 14 NOTES RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor NOTES MW6S010MR1 MW6S010GMR1 15 ...

Page 16

... MW6S010MR1 MW6S010GMR1 16 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MW6S010MR1 MW6S010GMR1 17 ...

Page 18

... MW6S010MR1 MW6S010GMR1 18 RF Device Data Freescale Semiconductor ...

Page 19

... PIN 2 Ç Ç Ç Ç Ç D2 Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç PIN 3 Ç Ç Ç Ç Ç BOTTOM VIEW RF Device Data Freescale Semiconductor PIN ONE ...

Page 20

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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