MW6S010GNR1 Freescale Semiconductor, MW6S010GNR1 Datasheet

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MW6S010GNR1

Manufacturer Part Number
MW6S010GNR1
Description
MOSFET RF N-CH 28V 10W TO270-2GW
Manufacturer
Freescale Semiconductor
Datasheets

Specifications of MW6S010GNR1

Transistor Type
N-Channel
Frequency
960MHz
Gain
18dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
125mA
Voltage - Test
28V
Power - Output
10W
Package / Case
TO-270-2 Gull Wing
Drain Source Voltage Vds
68V
Power Dissipation Pd
10W
Operating Frequency Range
450MHz To 1500MHz
Operating Temperature Range
-10°C To +150°C
Rohs Compliant
Yes
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Power Gain (typ)@vds
20dB
Frequency (min)
450MHz
Frequency (max)
1.5GHz
Package Type
TO-270 EP
Pin Count
3
Input Capacitance (typ)@vds
23@28VpF
Output Capacitance (typ)@vds
10@28VpF
Reverse Capacitance (typ)
0.32@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
33%
Mounting
Surface Mount
Mode Of Operation
2-Tone
Number Of Elements
1
Power Dissipation (max)
61400mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW6S010GNR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2005-2006, 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two - Tone Performance at 960 MHz: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for Class A or Class AB base station applications with frequencies
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
Output Power
Case Temperature 80°C, 10 W PEP
out
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 10 Watts PEP
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 125 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
BROADBAND RF POWER MOSFETs
C
J
Document Number: MW6S010N
MW6S010GNR1
450 - 1500 MHz, 10 W, 28 V
MW6S010NR1
LATERAL N - CHANNEL
CASE 1265A - 03, STYLE 1
MW6S010NR1 MW6S010GNR1
CASE 1265 - 09, STYLE 1
TO - 270 - 2 GULL
MW6S010GNR1
- 65 to +150
Value
- 0.5, +68
- 0.5, +12
MW6S010NR1
Value
PLASTIC
2.85
TO - 270 - 2
150
225
PLASTIC
(2,3)
Rev. 5, 6/2009
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

Related parts for MW6S010GNR1

MW6S010GNR1 Summary of contents

Page 1

... LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 09, STYLE 270 - 2 PLASTIC MW6S010NR1 CASE 1265A - 03, STYLE 270 - 2 GULL PLASTIC MW6S010GNR1 Symbol Value Unit V - 0.5, +68 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 2.85 MW6S010NR1 MW6S010GNR1 1 ...

Page 2

... Drain Efficiency Intermodulation Distortion Input Return Loss Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) V Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss MW6S010NR1 MW6S010GNR1 2 Rating 3 = 25°C unless otherwise noted) A Symbol I DSS ...

Page 3

... C18 C19 C15 C16 RF OUTPUT Z6 Z7 C20 C14 C17 = 2.55 r Part Number Manufacturer 2743019447 Fair - Rite ATC100B470JT500XT ATC T491D226K035AT Kemet 2222 - 136 - 68221 Vishay CDR33BX104AKWS Kemet 272915L Johanson ATC100B240JT500XT ATC ATC100B6R8JT500XT ATC ATC100B7R5JT500XT ATC A04T - 5 Coilcraft CRCW12061001FKEA Vishay MW6S010NR1 MW6S010GNR1 3 ...

Page 4

... MW6S010N Figure 2. MW6S010NR1(GNR1) Test Circuit Component Layout — 900 MHz MW6S010NR1 MW6S010GNR1 4 C7 C10 C11 C18 C16 C15 C19 C13 C12 C20 C17 C14 RF Device Data Freescale Semiconductor ...

Page 5

... Order DQ 5th Order 7th Order OUTPUT POWER (WATTS) AVG. out versus Output Power P3dB = 43.14 dBm (20. Vdc 125 Pulsed CW, 8 μsec(on), 1 msec(off 945 MHz INPUT POWER (dBm) in Figure 7. Pulse CW Output Power versus Input Power MW6S010NR1 MW6S010GNR1 100 Ideal Actual 29 5 ...

Page 6

... OUTPUT POWER (WATTS) CW out Figure 10. Power Gain versus Output Power MW6S010NR1 MW6S010GNR1 6 TYPICAL CHARACTERISTICS — 900 MHz Vdc 125 945 MHz G ps η D ACPR OUTPUT POWER (WATTS) AVG. out Figure 8. Single - Carrier CDMA ACPR, Power Gain and Power Added Efficiency versus Output Power − ...

Page 7

... T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours when the device = 10 W PEP, and η is operated Vdc out MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 210 230 250 = 32%. D MW6S010NR1 MW6S010GNR1 7 ...

Page 8

... MHz Z source f = 800 MHz Figure 13. Series Equivalent Source and Load Impedance — 900 MHz MW6S010NR1 MW6S010GNR1 Ω 980 MHz Z load f = 800 MHz Vdc 125 mA PEP DD DQ out source load MHz Ω Ω 800 3.1 + j1.9 10.1 + j2.3 2.8 + j1.7 820 8 ...

Page 9

... Part Number Manufacturer 2743019447 Fair - Rite T491C105K050AT Kemet T491X226K035AT Kemet C1210C104K5RAC Kemet ATC700A331JT150XT ATC ATC100B4R3JT500XT ATC 27291SL Johanson ATC100B4R7JT500XT ATC ISC - 1210 Vishay CRCW080510R0FKEA Vishay CRCW08051001FKEA Vishay CRCW08051201FKEA Vishay CRCW08052201FKEA Vishay 1224W Bourns CRCW12061001FKEA Vishay LP2951CDMR2G On Semiconductor BC847ALT1G On Semiconductor MW6S010NR1 MW6S010GNR1 SUPPLY 9 ...

Page 10

... MW6S010N 450 MHz Figure 15. MW6S010NR1(GNR1) Test Circuit Component Layout — 450 MHz MW6S010NR1 MW6S010GNR1 C14 C15 C13 C12 C10 C11 RF Device Data Freescale Semiconductor ...

Page 11

... Watts Avg. out = 150 mA, DQ ACPR ALT1 ALT2 OUTPUT POWER (WATTS) AVG. out and ALT2 versus Output Power MW6S010NR1 MW6S010GNR1 −10 −20 −30 −40 −50 −60 −70 −80 11 ...

Page 12

... MHz Figure 20. Series Equivalent Source and Load Impedance — 450 MHz MW6S010NR1 MW6S010GNR1 Ω 500 MHz Z source f = 500 MHz Z load f = 400 MHz Vdc 150 mA PEP DD DQ out source load MHz Ω Ω 400 9.0 + j3.8 15.0 + j1.4 8.8 + j5.4 420 14 ...

Page 13

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW6S010NR1 MW6S010GNR1 13 ...

Page 14

... MW6S010NR1 MW6S010GNR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MW6S010NR1 MW6S010GNR1 15 ...

Page 16

... MW6S010NR1 MW6S010GNR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MW6S010NR1 MW6S010GNR1 17 ...

Page 18

... MW6S010NR1 MW6S010GNR1 18 RF Device Data Freescale Semiconductor ...

Page 19

... Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software Device Data Freescale Semiconductor REVISION HISTORY Description the RF test condition voltage callout for test condition to indicate AC stimulus on the V iss and added “Measured in Functional GS(Q) connection versus the V connection and listed MW6S010NR1 MW6S010GNR1 19 ...

Page 20

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MW6S010NR1 MW6S010GNR1 Document Number: MW6S010N Rev. 5, 6/2009 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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