MRF9030NR1 Freescale Semiconductor, MRF9030NR1 Datasheet - Page 2

• Manufacturer Part Number: MRF9030NR1
• Description: IC MOSFET RF N-CHAN TO270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF9030NR1

• Transistor Type: N-Channel
• Frequency: 945MHz
• Gain: 20dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 250mA
• Voltage - Test: 26V
• Power - Output: 30W
• Package / Case: TO-270-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Power Gain (typ)@vds: 20dB
• Frequency (max): 1GHz
• Package Type: TO-270
• Pin Count: 3
• Forward Transconductance (typ): 2.7S
• Input Capacitance (typ)@vds: 49@26VpF
• Output Capacitance (typ)@vds: 27@26VpF
• Reverse Capacitance (typ): 1.2@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 41%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Power Dissipation (max): 139000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

2
MRF9030NR1
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
DS
DS
GS
DS
DS
GS
DS
DS
DS
DS
DD
DD
DD
DD
DD
DD
DD
DD
= 65 Vdc, V
= 26 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
DS
D
D
D
D
(In Freescale Test Fixture)
GS
GS
out
out
out
out
out
out
out
out
= 100 μAdc)
= 250 mAdc)
= 0.7 Adc)
= 2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
Characteristic
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
(T
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA,
c
= 25°c Unless Otherwise Noted)
GS
GS
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Symbol
V
V
V
I
I
I
C
DS(on)
C
IMD
IMD
GS(th)
GS(Q)
C
G
G
IRL
IRL
DSS
DSS
GSS
g
oss
η
η
rss
iss
fs
ps
ps
Min
—
—
—
—
—
—
—
—
18
37
—
—
—
—
—
—
2
3
0.23
40.5
Typ
2.9
3.8
2.7
1.2
- 31
- 13
- 31
- 12
49
27
20
41
20
—
—
—
Freescale Semiconductor
Max
0.4
- 28
10
—
—
—
—
—
—
—
—
—
—
- 9
1
1
4
5
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
pF
pF
pF
dB
dB
dB
dB
%
%
S