MRF9030NR1 Freescale Semiconductor, MRF9030NR1 Datasheet - Page 5

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MRF9030NR1

Manufacturer Part Number
MRF9030NR1
Description
IC MOSFET RF N-CHAN TO270-2
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF9030NR1

Transistor Type
N-Channel
Frequency
945MHz
Gain
20dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
250mA
Voltage - Test
26V
Power - Output
30W
Package / Case
TO-270-2
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Power Gain (typ)@vds
20dB
Frequency (max)
1GHz
Package Type
TO-270
Pin Count
3
Forward Transconductance (typ)
2.7S
Input Capacitance (typ)@vds
49@26VpF
Output Capacitance (typ)@vds
27@26VpF
Reverse Capacitance (typ)
1.2@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
41%
Mounting
Surface Mount
Mode Of Operation
2-Tone
Number Of Elements
1
Power Dissipation (max)
139000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF9030NR1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF9030NR1
Manufacturer:
FREESCALE
Quantity:
20 000
RF Device Data
Freescale Semiconductor
21.5
20.5
19.5
18.5
−10
−20
−30
−40
−50
−60
−70
−80
21
20
19
0.1
0.1
Figure 6. Intermodulation Distortion Products
Figure 4. Power Gain versus Output Power
V
I
f1 = 945 MHz
f2 = 945.1 MHz
DQ
DD
= 250 mA
= 26 Vdc
I
300 mA
250 mA
200 mA
DQ
P
P
= 375 mA
out
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
, OUTPUT POWER (WATTS) PEP
1
1
22
21
20
19
18
17
16
15
14
930
Figure 3. Class AB Broadband Circuit Performance
3rd Order
5th Order
7th Order
V
f1 = 945 MHz
f2 = 945.1 MHz
DD
G
η
IMD
IRL
ps
= 26 Vdc
10
10
935
TYPICAL CHARACTERISTICS
940
f, FREQUENCY (MHz)
100
100
945
V
P
I
Two−Tone, 100 kHz Tone Spacing
DQ
DD
out
= 250 mA
= 26 Vdc
= 30 W (PEP)
22
20
18
16
14
12
10
0.1
−15
−20
−25
−30
−35
−40
−45
−50
−55
950
Figure 7. Power Gain and Efficiency versus
0.1
Figure 5. Intermodulation Distortion versus
955
G
η
P
ps
out
, OUTPUT POWER (WATTS) AVG.
P
out
I
DQ
250 mA
, OUTPUT POWER (WATTS) PEP
1
960
Output Power
= 200 mA
50
45
40
35
−30
−32
−34
−36
−38
1
Output Power
300 mA
−10
−12
−14
−16
−18
375 mA
10
10
V
I
f = 945 MHz
DQ
DD
= 250 mA
V
f1 = 945 MHz
f2 = 945.1 MHz
= 26 Vdc
DD
MRF9030NR1
= 26 Vdc
100
60
50
40
30
20
10
0
100
5

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