MRFE6S9046GNR1 Freescale Semiconductor, MRFE6S9046GNR1 Datasheet - Page 7

• Manufacturer Part Number: MRFE6S9046GNR1
• Description: MOSFET RF N-CH 45W TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9046GNR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 19dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 300mA
• Voltage - Test: 28V
• Power - Output: 35.5W
• Package / Case: TO-270-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 17.8W
• Power Gain (typ)@vds: 19dB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: TO-270 WB GULL
• Pin Count: 5
• Input Capacitance (typ)@vds: 120@28VpF
• Output Capacitance (typ)@vds: 318@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 57%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/GSM/GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
24
22
20
18
16
14
20
18
16
14
12
10
−40
−45
−50
−55
−60
−65
−70
−75
8
6
4
2
0
1
1
0
V
f = 940 MHz, EDGE Modulation
G
DD
ps
Figure 8. Power Gain and Drain Efficiency
η
V
f = 940 MHz, EDGE Modulation
D
DD
= 28 Vdc, I
η
Figure 10. Spectral Regrowth at 400 kHz
D
Figure 12. EVM and Drain Efficiency
= 28 Vdc, I
85_C
10
T
25_C
P
C
P
out
DQ
= −30_C
out
versus Output Power
, OUTPUT POWER (WATTS) AVG.
P
versus Output Power
, OUTPUT POWER (WATTS) CW
DQ
= 285 mA
versus Output Power
out
= 285 mA
, OUTPUT POWER (WATTS)
T
C
20
= 85_C
10
10
−30_C
30
T
EVM
V
I
f = 940 MHz
DQ
C
DD
= −30_C
= 300 mA
= 28 Vdc
85_C
TYPICAL CHARACTERISTICS
85_C
40
85_C
25_C
−30_C
−30_C
25_C
25_C
70
60
50
75
60
45
30
15
0
35
23
11
65
59
53
47
41
29
17
5
−50
−55
−60
−65
−70
−75
−80
−85
6
5
4
3
2
1
0
22
21
20
19
18
17
16
900
0
900
V
f = 940 MHz, EDGE Modulation
V
I
EDGE Modulation
DQ
DD
DD
Figure 11. Spectral Regrowth at 600 kHz
Figure 13. Power Gain versus Frequency
910
910
= 285 mA
= 28 Vdc, I
= 28 Vdc
Figure 9. EVM versus Frequency
10
920
920
P
MRFE6S9046NR1 MRFE6S9046GNR1
versus Output Power
DQ
out
T
, OUTPUT POWER (WATTS)
P
= 285 mA
C
f, FREQUENCY (MHz)
930
out
f, FREQUENCY (MHz)
= −30_C
930
20
= 26.5 W Avg.
17.8 W Avg.
25_C
85_C
5 W Avg.
940
940
T
C
= 85_C
30
V
P
I
950
DQ
DD
out
950
= 300 mA
= 35 W CW
= 28 Vdc
960
960
−30_C
40
970
25_C
970
980
50
980
7