MRFE6S9046GNR1 Freescale Semiconductor, MRFE6S9046GNR1 Datasheet - Page 8
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MRFE6S9046GNR1
Manufacturer Part Number
MRFE6S9046GNR1
Description
MOSFET RF N-CH 45W TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet
1.MRFE6S9046GNR1.pdf
(21 pages)
Specifications of MRFE6S9046GNR1
Transistor Type
N-Channel
Frequency
960MHz
Gain
19dB
Voltage - Rated
66V
Current Rating
10µA
Current - Test
300mA
Voltage - Test
28V
Power - Output
35.5W
Package / Case
TO-270-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
66V
Output Power (max)
17.8W
Power Gain (typ)@vds
19dB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
TO-270 WB GULL
Pin Count
5
Input Capacitance (typ)@vds
120@28VpF
Output Capacitance (typ)@vds
318@28VpF
Reverse Capacitance (typ)
0.9@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
57%
Mounting
Surface Mount
Mode Of Operation
CDMA/GSM/GSM EDGE
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRFE6S9046GNR1
Manufacturer:
FREESCALE
Quantity:
1 400
MRFE6S9046NR1 MRFE6S9046GNR1
8
20
15
10
−5
5
0
650
Figure 14. Broadband Frequency Response
V
P
I
750
DQ
DD
out
= 300 mA
= 28 Vdc
= 9 dBm
850
Gain
f, FREQUENCY (MHz)
950
IRL
1050
−100
−110
−10
−20
−30
−40
−50
−60
−70
−80
−90
Center 1.96 GHz
1150
600 kHz
Reference Power
400 kHz
1250
TYPICAL CHARACTERISTICS
Figure 16. EDGE Spectrum
1350
GSM TEST SIGNAL
1450
0
−6
−12
−18
−24
−30
200 kHz
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
10
10
10
10
10
10
9
8
7
6
5
4
90
Figure 15. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
400 kHz
110
Span 2 MHz
600 kHz
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
= 28 Vdc, P
150
out
170
= 35.5 W CW, and η
Freescale Semiconductor
190
RF Device Data
210
D
= 57%.
230
250