MRF5S21045NBR1 Freescale Semiconductor, MRF5S21045NBR1 Datasheet - Page 6

• Manufacturer Part Number: MRF5S21045NBR1
• Description: MOSFET RF N-CH 28V 10W TO272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF5S21045NBR1

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 14.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 500mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-272-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 10W
• Power Gain (typ)@vds: 14.5dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: TO-272 WB EP
• Pin Count: 5
• Forward Transconductance (typ): 3.2S
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 25.5%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA/CDMA/TDMA
• Number Of Elements: 1
• Power Dissipation (max): 130000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF5S21045NR1 MRF5S21045NBR1
6
40
30
20
10
-60
-2 5
-3 0
-3 5
-4 0
-4 5
-5 0
-5 5
0
1
T
0.1
V
f1 = 2135 MHz, f2 = 2145 MHz
2 x W-CDMA, 10 MHz
@ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
C
85_C
Figure 7. Intermodulation Distortion Products
DD
= -30_C
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
V
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
7th Order
= 28 Vdc, I
5th Order
DD
3rd Order
Power Gain and Drain Efficiency
= 28 Vdc, P
P
G
out
ps
DQ
, OUTPUT POWER (WATTS) AVG.
versus Output Power
= 500 mA
versus Tone Spacing
TWO-T ONE SPACING (MHz)
out
1
= 45 W (PEP), I
10
-30 _C
η
16
14
12
10
D
8
6
DQ
0
= 500 mA
Figure 11. Power Gain versus Output Power
25_C
10
10
85_C
25_C
TYPICAL CHARACTERISTICS
25_C
-30 _C
V
-30 _C
85_C
25_C
DD
20
P
85_C
out
= 12 V
, OUTPUT POWER (WATTS) CW
ACPR
IM3
16 V
100
30
100
-10
-20
-30
-40
-50
40
20 V
17
16
15
14
13
12
11
50
0.1
54
52
50
48
46
44
42
V
I
f = 2140 MHz
24 V
DQ
28
Figure 10. Power Gain and Drain Efficiency
DD
T
C
= 500 mA
= 28 Vdc
I
f = 2140 MHz
60
P1dB = 47.60 dBm (57.5 W)
DQ
= -30_C
25_C
85_C
Figure 8. Pulse CW Output Power versus
= 500 mA
28 V
30
P
70
versus CW Output Power
out
P3dB = 48.17 dBm (65.6 W)
32 V
, OUTPUT POWER (WATTS) CW
1
80
P
32
in
, INPUT POWER (dBm)
Input Power
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
34
DD
= 28 Vdc, I
10
Freescale Semiconductor
36
-30 _C
DQ
Ideal
= 500 mA
RF Device Data
85_C
25_C
38
Actual
100
60
50
40
30
20
10
0
40