MRF5S21045NBR1 Freescale Semiconductor, MRF5S21045NBR1 Datasheet - Page 8

• Manufacturer Part Number: MRF5S21045NBR1
• Description: MOSFET RF N-CH 28V 10W TO272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF5S21045NBR1

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 14.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 500mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-272-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 10W
• Power Gain (typ)@vds: 14.5dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: TO-272 WB EP
• Pin Count: 5
• Forward Transconductance (typ): 3.2S
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 25.5%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA/CDMA/TDMA
• Number Of Elements: 1
• Power Dissipation (max): 130000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF5S21045NR1 MRF5S21045NBR1
8
Figure 15. Series Equivalent Source and Load Impedance
Z
Z
source
load
Input
Matching
Network
2000
2140
2170
2200
2110
MHz
f
V
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
source
5.61 - j7.85
4.92 - j7.85
8.15 - j5.91
7.07 - j7.32
6.28 - j7.71
f = 2200 MHz
Z
Z
DQ
load
source
Ω
Device
Under
Test
= 500 mA, P
Z
o
= 10 Ω
f = 2000 MHz
out
Z
= 10 W Avg.
load
4.78 - j5.19
4.04 - j4.14
3.81 - j3.69
3.69 - j3.39
3.57 - j3.11
Z
f = 2000 MHz
f = 2200 MHz
load
Ω
Output
Matching
Network
Z
source
Freescale Semiconductor
RF Device Data