MRF6S19060NR1 Freescale Semiconductor, MRF6S19060NR1 Datasheet - Page 2

• Manufacturer Part Number: MRF6S19060NR1
• Description: MOSFET RF N-CH 28V 12W TO270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S19060NR1

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 16dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 610mA
• Voltage - Test: 28V
• Power - Output: 12W
• Package / Case: TO-270-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in
1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
MRF6S19060NR1 MRF6S19060NBR1
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
GS
GS
= 200 μAdc)
= 610 mAdc, Measured in Functional Test)
= 2.0 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Test Methodology
Test Methodology
Characteristic
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
Rating
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
IRL
DSS
DSS
GSS
η
= 610 mA, P
3
rss
ps
D
14.5
24.5
Min
Package Peak Temperature
out
1.5
0.2
—
—
—
—
—
—
—
2
= 12 W Avg., f = 1930 MHz, 2 - Carrier
1B (Minimum)
III (Minimum)
A (Minimum)
Class
260
Typ
- 37
- 51
- 12
2.2
2.8
0.3
1.5
16
26
—
—
—
Freescale Semiconductor
Max
18.5
- 35
- 48
- 10
2.5
0.4
10
—
—
1
1
4
RF Device Data
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
°C
pF
%