MRF6S19060NR1 Freescale Semiconductor, MRF6S19060NR1 Datasheet - Page 6

• Manufacturer Part Number: MRF6S19060NR1
• Description: MOSFET RF N-CH 28V 12W TO270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S19060NR1

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 16dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 610mA
• Voltage - Test: 28V
• Power - Output: 12W
• Package / Case: TO-270-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

6
MRF6S19060NR1 MRF6S19060NBR1
−60
−10
−20
−30
−40
−50
19
18
17
16
15
14
13
12
0.1
Figure 7. Intermodulation Distortion Products
Figure 10. Power Gain and Drain Efficiency
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
3rd Order
7th Order
DD
5th Order
1
= 28 Vdc, P
85_C
25_C
T
P
C
out
versus CW Output Power
= −30_C
, OUTPUT POWER (WATTS) CW
versus Tone Spacing
TWO−TONE SPACING (MHz)
out
1
= 60 W (PEP), I
G
ps
10
DQ
60
50
40
30
20
10
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
0
= 610 mA
V
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2−Carrier N−CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
85_C
V
I
f = 1960 MHz
DD
DQ
DD
and Drain Efficiency versus Output Power
η
= 28 Vdc, I
= 610 mA
D
= 28 Vdc
TYPICAL CHARACTERISTICS
10
1
P
DQ
−30_C
out
, OUTPUT POWER (WATTS) AVG.
= 610 mA
IM3
100
100
70
60
50
40
30
20
10
0
10
17
16
15
14
13
12
53
51
49
47
45
43
41
39
G
23
0
ps
Figure 11. Power Gain versus Output Power
P1dB = 48.792 dBm (75.72 W)
25_C
Figure 8. Pulsed CW Output Power versus
85_C
T
η
C
D
−30_C
= −30_C
25
ACPR
85_C
25_C
20
−30_C
P
−30_C
out
25_C
25_C
85_C
27
, OUTPUT POWER (WATTS) CW
P3dB = 49.503 dBm (89.19 W)
P
100
in
, INPUT POWER (dBm)
−10
−20
−30
−40
−50
−60
−70
Input Power
40
29
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
DD
= 28 Vdc, I
V
Freescale Semiconductor
DD
31
60
= 24 V
DQ
= 610 mA
33
RF Device Data
I
f = 1960 MHz
DQ
28 V
80
= 610 mA
Ideal
35
Actual
32 V
100
37