MRF6S19100NBR1 Freescale Semiconductor, MRF6S19100NBR1 Datasheet - Page 6

• Manufacturer Part Number: MRF6S19100NBR1
• Description: MOSFET RF N-CH 28V 22W TO272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S19100NBR1

• Transistor Type: N-Channel
• Frequency: 1.99GHz
• Gain: 14.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 22W
• Package / Case: TO-272-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF6S19100NR1 MRF6S19100NBR1
6
−10
−20
−30
−40
−50
−60
18
17
16
15
14
13
12
11
0.1
V
I
f = 1960 MHz
DQ
Figure 7. Intermodulation Distortion Products
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
DD
5th Order
Figure 10. Power Gain and Drain Efficiency
7th Order
3rd Order
DD
= 950 mA
= 28 Vdc
1
= 28 Vdc, P
T
C
= −30_C
P
versus CW Output Power
out
25_C
85_C
out
, OUTPUT POWER (WATTS) CW
versus Tone Spacing
TWO−TONE SPACING (MHz)
= 100 W (PEP), I
1
10
G
η
ps
D
DQ
50
40
30
20
10
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
0
= 950 mA
10
V
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2−Carrier N−CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
DD
and Drain Efficiency versus Output Power
= 28 Vdc, I
1
TYPICAL CHARACTERISTICS
100
P
−30_C
DQ
out
85_C
25_C
, OUTPUT POWER (WATTS) AVG.
= 950 mA
300
100
70
60
50
40
30
20
10
0
G
ps
10
η
D
IM3
59
57
55
53
51
49
47
45
16
15
14
13
12
10
11
30
T
0
C
P1dB = 51.13 dBm (129.72 W)
= 85_C
Figure 11. Power Gain versus Output Power
Figure 8. Pulsed CW Output Power versus
ACPR
85_C
32
P3dB = 52.156 dBm (164.29 W)
−30_C
100
−30_C
−30_C
85_C
P
50
25_C
25_C
out
, OUTPUT POWER (WATTS) CW
P
34
200
in
, INPUT POWER (dBm)
−20
−30
−40
−50
−60
−70
Input Power
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
DD
100
36
= 28 Vdc, I
V
DD
Freescale Semiconductor
= 24 V
DQ
38
= 950 mA
28 V
RF Device Data
150
I
f = 1960 MHz
DQ
Ideal
40
= 950 mA
Actual
32 V
200
42