MRF6S19100NBR1 Freescale Semiconductor, MRF6S19100NBR1 Datasheet - Page 8
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MRF6S19100NBR1
Manufacturer Part Number
MRF6S19100NBR1
Description
MOSFET RF N-CH 28V 22W TO272-4
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF6S19100NBR1.pdf
(16 pages)
Specifications of MRF6S19100NBR1
Transistor Type
N-Channel
Frequency
1.99GHz
Gain
14.5dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
950mA
Voltage - Test
28V
Power - Output
22W
Package / Case
TO-272-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
MRF6S19100NR1 MRF6S19100NBR1
8
Figure 15. Series Equivalent Source and Load Impedance
Z
Z
source
load
Input
Matching
Network
1930
1960
1990
MHz
f
V
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
source
2.51 - j4.80
2.31 - j4.54
2.12 - j4.20
f = 1990 MHz
Z
DQ
source
Ω
Device
Under
Test
= 950 mA, P
Z
load
out
Z
f = 1930 MHz
= 22 W Avg.
load
f = 1990 MHz
1.67 - j2.85
1.63 - j2.55
1.74 - j3.11
Z
o
Z
= 5 Ω
load
Ω
Output
Matching
Network
Z
source
f = 1930 MHz
Freescale Semiconductor
RF Device Data