MRFG35020AR1 Freescale Semiconductor, MRFG35020AR1 Datasheet - Page 2

• Manufacturer Part Number: MRFG35020AR1
• Description: TRANSISTOR RF 20W GAAS NI-360
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35020AR1

• Transistor Type: pHEMT FET
• Frequency: 3.5GHz
• Gain: 11.5dB
• Voltage - Rated: 15V
• Current - Test: 300mA
• Voltage - Test: 12V
• Power - Output: 20W
• Package / Case: NI-360
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

MRFG35020AR1
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
DC Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Typical RF Performance (In Freescale Test Fixture, 50 ohm system) V
1. Measurements made with device in test fixture.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Off State Drain Current
Off State Current
Gate - Source Cut - off Voltage
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Output Power, 1 dB Compression Point, CW
(V
(V
(V
DS
DS
DS
= 3.5 Vdc, V
= 28.5 Vdc, V
= 3.5 Vdc, I
DS
GS
GS
= 42.5 mA)
= - 2.2 Vdc)
Characteristic
= - 2.5 Vdc)
Test Methodology
(T
C
= 25°C unless otherwise noted)
(1)
V
DD
= 12 Vdc, I
Symbol
DD
V
ACPR
P1dB
I
I
GS(th)
G
DSO
DSX
η
= 12 Vdc, I
ps
D
DQ
= 300 mA, P
DQ
Min
- 1.2
9.5
18
= 300 mA, f = 3500 MHz
—
—
—
—
out
= 2 W Avg., f = 3500 MHz,
- 0.95
11.5
Typ
- 43
10
22
20
2
IV (Minimum)
A (Minimum)
2 (Minimum)
Class
Freescale Semiconductor
Max
42.5
425
- 0.7
- 39
—
—
—
RF Device Data
mAdc
μAdc
Unit
Vdc
dBc
dB
%
W