MRFG35020AR1 Freescale Semiconductor, MRFG35020AR1 Datasheet - Page 2
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MRFG35020AR1
Manufacturer Part Number
MRFG35020AR1
Description
TRANSISTOR RF 20W GAAS NI-360
Manufacturer
Freescale Semiconductor
Datasheet
1.MRFG35020AR1.pdf
(12 pages)
Specifications of MRFG35020AR1
Transistor Type
pHEMT FET
Frequency
3.5GHz
Gain
11.5dB
Voltage - Rated
15V
Current - Test
300mA
Voltage - Test
12V
Power - Output
20W
Package / Case
NI-360
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFG35020AR1
Manufacturer:
FREESCALE
Quantity:
20 000
MRFG35020AR1
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
DC Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Typical RF Performance (In Freescale Test Fixture, 50 ohm system) V
1. Measurements made with device in test fixture.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Off State Drain Current
Off State Current
Gate - Source Cut - off Voltage
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Output Power, 1 dB Compression Point, CW
(V
(V
(V
DS
DS
DS
= 3.5 Vdc, V
= 28.5 Vdc, V
= 3.5 Vdc, I
DS
GS
GS
= 42.5 mA)
= - 2.2 Vdc)
Characteristic
= - 2.5 Vdc)
Test Methodology
(T
C
= 25°C unless otherwise noted)
(1)
V
DD
= 12 Vdc, I
Symbol
DD
V
ACPR
P1dB
I
I
GS(th)
G
DSO
DSX
η
= 12 Vdc, I
ps
D
DQ
= 300 mA, P
DQ
Min
- 1.2
9.5
18
= 300 mA, f = 3500 MHz
—
—
—
—
out
= 2 W Avg., f = 3500 MHz,
- 0.95
11.5
Typ
- 43
10
22
20
2
IV (Minimum)
A (Minimum)
2 (Minimum)
Class
Freescale Semiconductor
Max
42.5
425
- 0.7
- 39
—
—
—
RF Device Data
mAdc
μAdc
Unit
Vdc
dBc
dB
%
W