MRFG35020AR1 Freescale Semiconductor, MRFG35020AR1 Datasheet - Page 5

• Manufacturer Part Number: MRFG35020AR1
• Description: TRANSISTOR RF 20W GAAS NI-360
• Manufacturer: Freescale Semiconductor

Specifications of MRFG35020AR1

• Transistor Type: pHEMT FET
• Frequency: 3.5GHz
• Gain: 11.5dB
• Voltage - Rated: 15V
• Current - Test: 300mA
• Voltage - Test: 12V
• Power - Output: 20W
• Package / Case: NI-360
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
NOTE: All data is referenced to package lead interface. Γ
All data is generated from load pull, not from the test circuit shown.
−10
−20
−30
−40
−50
16
14
12
10
Channel Power Ratio and IRL versus Output Power
8
6
4
0
20
20
Figure 3. Single - Channel W - CDMA Power Gain
Figure 4. Single - Channel W - CDMA Adjacent
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
DS
and Drain Efficiency versus Output Power
S
DS
S
= 0.697é−153.9_, Γ
22
22
= 12 Vdc, I
= 0.697é−153.9_, Γ
= 12 Vdc, I
ACPR
IRL
TYPICAL CHARACTERISTICS
24
24
DQ
DQ
P
P
out
out
= 300 mA, f = 3500 MHz
26
26
= 300 mA, f = 3500 MHz
, OUTPUT POWER (dBm)
, OUTPUT POWER (dBm)
η
G
D
ps
L
L
= 0.949é−166.7_
28
28
= 0.949é−166.7_
30
30
S
and Γ
32
32
L
are the impedances presented to the DUT.
34
34
36
36
38
38
60
50
40
30
20
10
0
−5
−10
−15
−20
−25
−30
MRFG35020AR1
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