MRF7S19120NR1 Freescale Semiconductor, MRF7S19120NR1 Datasheet - Page 3

• Manufacturer Part Number: MRF7S19120NR1
• Description: MOSFET RF N-CH TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S19120NR1

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 36W
• Package / Case: TO-270-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Video Bandwidth @ 120 W PEP P
Gain Flatness in 60 MHz Bandwidth @ P
Average Deviation from Linear Phase in 60 MHz Bandwidth
Average Group Delay @ P
Part-to-Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
@ P
f = 1960 MHz, Six Sigma Window
(-30 °C to +85°C)
(-30 °C to +85°C)
out
= 120 W CW
out
Characteristic
= 120 W CW, f = 1960 MHz
out
where IM3 = -30 dBc
(T
out
A
out
= 25°C unless otherwise noted)
= 36 W Avg.
= 120 W CW,
DD
= 28 Vdc, I
(continued)
Symbol
ΔP1dB
Delay
VBW
ΔΦ
ΔG
G
Φ
F
DQ
= 1200 mA, 1930-1990 MHz Bandwidth
Min
—
—
—
—
—
—
—
0.495
0.914
0.016
0.009
1.98
33.9
Typ
20
Max
—
—
—
—
—
—
—
MRF7S19120NR1
dBm/°C
dB/°C
MHz
Unit
dB
ns
°
°
3