MRF7S19120NR1 Freescale Semiconductor, MRF7S19120NR1 Datasheet - Page 6

• Manufacturer Part Number: MRF7S19120NR1
• Description: MOSFET RF N-CH TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S19120NR1

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 36W
• Package / Case: TO-270-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF7S19120NR1
6
19
18
17
16
15
14
1
1500 mA
1200 mA
600 mA
900 mA
Figure 5. Two-T one Power Gain versus
V
Two-Tone Measurements, 10 MHz Tone Spacing
P
DD
out
, OUTPUT POWER (WATTS) PEP
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Output Power
10
I
DQ
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
= 1800 mA
17.6
17.4
17.2
16.8
16.6
16.4
16.2
15.8
15.6
18.4
18.3
18.2
18.1
17.9
17.8
17.7
17.6
17.5
17.4
17
16
18
1880
1880
Broadband Performance @ P
Broadband Performance @ P
η
V
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
D
1900
1900
V
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
DD
DD
= 28 Vdc, P
= 28 Vdc, P
TYPICAL CHARACTERISTICS
100
1920
1920
G
IRL
ps
out
out
PARC
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
PARC
1940
1940
= 59 W (Avg.), I
= 36 W (Avg.), I
300
IRL
1960
1960
η
G
D
ps
DQ
DQ
1980
1980
= 1200 mA
= 1200 mA
out
out
-1 0
-2 0
-3 0
-4 0
-5 0
-60
= 36 Watts Avg.
= 59 Watts Avg.
2000
2000
1
Figure 6. Third Order Intermodulation Distortion
V
Two-Tone Measurements, 10 MHz Tone Spacing
DD
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
2020
2020
I
DQ
P
= 600 mA
out
2040
2040
, OUTPUT POWER (WATTS) PEP
350 mA
versus Output Power
45
44
43
42
41
-2
-2.5
-3
-3.5
-4
-4.5
36
35
34
33
32
-0.5
-1
-1.5
-2
-2.5
-3
10
1200 mA
900 mA
0
-4
-8
-12
-16
-20
0
-4
-8
-12
-16
-20
Freescale Semiconductor
RF Device Data
100
1500 mA
300